Inventor
Shunsuke Inoue
Inventor
Yokohama, JP
Overview
Patents· 62 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices21%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation17%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
H04NPictorial communication, e.g. television5%
G03BApparatus or arrangements for taking photographs or for projecting or viewing them4%
H10BElectronic memory devices4%
G02BOptical elements, systems or apparatus3%
PatentTitleYear
8,580,595'Solid-state image sensing device and camera system the same'20138,436,406'Solid-state image sensing device and camera system using the same'20138,159,010'Solid-state image pick-up device and imaging system using the same'20128,077,239'Solid-state image pickup device and camera'20117,755,118'Solid-state image pick-up device and imaging system using the same'20107,723,766'Solid-state image sensing device and camera system using the same'20107,714,919'Solid-state image pickup device and camera'20107,709,780'Photoelectric conversion device and camera using photoelectric conversion device'20107,705,381'Solid-state image sensing device and camera system using the same'20107,642,581'Solid-state image sensing device'20107,639,297'Image pickup apparatus'20097,626,620'Photoelectric conversion unit stacked structure'20097,456,453'Solid-state image sensing device'20087,423,305'Solid-state image sensing device having high sensitivity and camera system using the same'20087,385,172'Photoelectric conversion device having an insulation film on a reflection prevention film, and camera using such photoelectric conversion device'20087,307,300'Solid-state image pick-up device and imaging system using the same'20077,215,368'Photoelectric conversion device with photoelectric conversion units stacked in a depth direction and corresponding read transistor structure'20077,126,102'Photoelectric conversion device and camera using photoelectric conversion device'20066,971,750'Projection display apparatus'20056,952,228'Image pickup apparatus'20056,885,047'Solid-state image sensing device having pixels with barrier layer underneath transistor regions and camera using said device'20056,476,887'Preparation of liquid crystal display using multiple light beam scanning speeds'20026,407,442'Semiconductor device, and operating device, signal converter, and signal processing system using the same semiconductor device'20026,373,099'Method of manufacturing a surrounding gate type MOFSET'20026,329,265'Method of making a semiconductor device using processing from both sides of a workpiece'20016,313,894'Liquid crystal display'20016,191,435'Semiconductor integrated circuit and liquid crystal display appratus'20016,175,397'Liquid crystal display apparatus, a liquid crystal projector using same, and a method of manufacturing the liquid crystal display apparatus'20016,172,723'Reflection type LCD pixel having outer low reflectivity region surrounding high reflectivity region upon which microlens light is focussed'20016,144,427'Polymer dispersed liquid crystal panel'20006,104,431'Visual axis detecting apparatus and method including scanning light source, and image device using same'20006,096,582'Method of making a semiconductor device'20006,025,889'Projection type liquid crystal display apparatus utilizing a high thermal conductivity connecting member'20005,994,757'Electronic circuit device capable for use as a memory device'19995,952,694'Semiconductor device made using processing from both sides of a workpiece'19995,926,238'Image display device, semiconductor device and optical element'19995,923,391'Active matrix LCD device hang a light shielding layer with particular rubbing directions'19995,918,115'Method of manufacturing a surrounding gate type MOSFET'19995,913,111'Method of manufacturing an insulaed gate transistor'19995,886,365'Liquid crystal display device having a capacitator in the peripheral driving circuit'19995,873,003'Sight line detector, display unit, view finder and unit and camera with the same display unit'19995,827,755'Liquid crystal image display unit and method for fabricating semiconductor optical member'19985,815,223'Display device having a silicon substrate, a locos film formed on the substrate, a tensile stress film formed on the locos film, and TFTs formed on the tensile stress film'19985,812,231'Display unit'19985,773,355'Method for manufacturing semiconductor substrate'19985,757,054'Display unit'19985,712,684'Viewing apparatus with visual axis detector'19985,700,719'Semiconductor device and method for producing the same'19975,693,959'Thin film transistor and liquid crystal display using the same'19975,691,794'Liquid crystal display device'19975,614,439'Method of making a planar wiring in an insulated groove using alkylaluminum hydride'19975,599,741'Method for making semiconductor device with metal deposited on electron donating surface of gate electrode'19975,598,037'Semiconductor device with a contact member made of semiconductor material having a columnar structure'19975,541,454'Semiconductor device containing electrostatic capacitive element and method for manufacturing same'19965,536,361'Process for preparing semiconductor substrate by bonding to a metallic surface'19965,530,266'Liquid crystal image display unit and method for fabricating semiconductor optical member'19965,468,344'Method for manufacturing semiconductor devices'19955,466,961'Semiconductor device and method of manufacturing the same'19955,434,441'Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness'19955,412,240'Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness'19955,218,232'Semiconductor device having two-level wiring'19935,204,544'Photoelectric conversion device with stabilizing electrode'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1993–2013Patents assigned to CANON KK (61)· patent assignee history
1993–1997Based in Atsugi, JP· patent location history
1993Based in Hiratsuka, JP· patent location history
1995–2012Based in Yokohama, JP· patent location history
1998Based in Tokyo, JP· patent location history
2005–2013Based in Kanagawa, JP· patent location history
2011–2013Patents assigned to INOUE SHUNSUKE (3)· patent assignee history
2011Patents assigned to KIKUCHI SHIN (1)· patent assignee history
2013Patents assigned to SHINOHARA MAHITO (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CANON KK | 61 | 1993–2013 |
| INOUE SHUNSUKEself | 3 | 2011–2013 |
| KIKUCHI SHIN | 1 | 2011 |
| SHINOHARA MAHITO | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yokohama, JP | 40 | 1995–2012 |
| Kanagawa, JP | 15 | 2005–2013 |
| Atsugi, JP | 5 | 1993–1997 |
| Tokyo, JP | 1 | 1998 |
| Hiratsuka, JP | 1 | 1993 |