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Inventor

Tsuyoshi Kachi

Inventor
Tokyo, JP

Overview

30→
Patents
2004–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 30 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices35%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%
H01LSemiconductor devices18%
H03HImpedance networks, e.g. resonant circuits1%
H10BElectronic memory devices1%
PatentTitleYear
10,749,026Semiconductor device and method of manufacturing the semiconductor device202010,727,105Semiconductor device and manufacturing method therefor202010,615,251Semiconductor device and manufacturing method thereof202010,381,435Semiconductor device and manufacturing method therefor201910,164,087Semiconductor device and method of manufacturing same20189,780,187'Semiconductor device including an IGBT as a power transistor and a method of manufacturing the same'20179,406,787'Semiconductor device including an IGBT as a power transistor'20169,397,160'Semiconductor device'20169,397,156'Semiconductor device and method of manufacturing the same'20169,231,082'Power semiconductor device having gate electrode coupling portions for etchant control'20169,209,249'Semiconductor device and method of manufacturing the same'20159,166,017'Method of manufacturing semiconductor device and semiconductor device'20159,142,555'Semiconductor device'20158,969,929'Power semiconductor device having gate electrode coupling portions for etchant control'20158,937,350'Semiconductor device and method of manufacturing the same'20158,741,699'Method of manufacturing semiconductor device and semiconductor device'20148,659,078'Semiconductor device and method of manufacturing the same'20148,546,223'Semiconductor device and manufacturing method of the same'20138,405,145'Semiconductor device and method of manufacturing the same'20138,198,162'Semiconductor device and a method of manufacturing the same'20127,977,739'Semiconductor device and manufacturing method for semiconductor device'20117,968,939'Semiconductor device and method of manufacturing the same'20117,847,347'Semiconductor device and method of manufacturing the same'20107,825,480'Power semiconductor device and manufacturing method of the same'20107,759,730'Semiconductor device and method of manufacturing the same'20107,679,136'Semiconductor device and manufacturing method of the same'20107,544,568'Semiconductor device and method of manufacturing the same'20096,861,304'Semiconductor integrated circuit device and method of manufacturing thereof'20056,831,316'Semiconductor memory device and method of manufacturing the same'20046,774,536'Surface acoustic wave device'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004–2005Patents assigned to HITACHI LTD (3)· patent assignee history
2004–2005Based in Kokubunji, JP· patent location history
2009–2010Patents assigned to RENESAS TECH CORP (3)· patent assignee history
2009–2017Based in Tokyo, JP· patent location history
2010–2020Patents assigned to RENESAS ELECTRONICS CORP (24)· patent assignee history
2012–2015Patents assigned to KACHI TSUYOSHI (5)· patent assignee history
2013–2014Patents assigned to NAKAZAWA YOSHITO (2)· patent assignee history
2014–2016Based in Kanagawa, JP· patent location history
2018–2020Based in Ibaraki, JP· patent location history
2019–2020Based in Hitachinaka, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
RENESAS ELECTRONICS CORP242010–2020
KACHI TSUYOSHIself52012–2015
HITACHI LTD32004–2005
RENESAS TECH CORP32009–2010
NAKAZAWA YOSHITO22013–2014
Locations
LocationPatentsSpan
Tokyo, JP122009–2017
Kanagawa, JP82014–2016
Ibaraki, JP32018–2020
Kokubunji, JP32004–2005
Hitachinaka, JP22019–2020