Inventor
Carol I. H. Ashby
Inventor
Edgewood, NM, US
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1028%
C04BLime, magnesia9%
C23FNon-mechanical removal of metallic material from surface9%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light9%
B81BMicrostructural devices or systems, e.g. micromechanical devices6%
G02BOptical elements, systems or apparatus6%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry3%
B01LChemical or physical laboratory apparatus for general use3%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems3%
C03CChemical composition of glasses, glazes or vitreous enamels3%
PatentTitleYear
6,765,242'Npn double heterostructure bipolar transistor with ingaasn base region'20046,599,436'Formation of interconnections to microfluidic devices'20036,599,362'Cantilever epitaxial process'20036,228,672'Stable surface passivation process for compound semiconductors'20016,096,656'Formation of microchannels from low-temperature plasma-deposited silicon oxynitride'20005,814,238'Method for dry etching of transition metals'19985,463,649'Monolithically integrated solid state laser and waveguide using spin-on glass'19955,451,542'Surface passivation process of compound semiconductor material using UV photosulfidation'19955,356,516'Process for etching mixed metal oxides'19945,092,957'Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching'19924,978,418'Controlled ion implant damage profile for etching'19904,965,806'Semiconductor laser devices having lateral refractive index tailoring'19904,880,493'Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication'19894,838,989'Laser-driven fusion etching process'19894,648,936'Dopant type and/or concentration selective dry photochemical etching of semiconductor materials'19874,648,938'Composition/bandgap selective dry photochemical etching of semiconductor materials'1987Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1987–1992Patents assigned to US ENERGY (7)· patent assignee history
1987–2004Based in Edgewood, NM, US· patent location history
1994–2004Patents assigned to SANDIA CORP (9)· patent assignee history
2004Patents assigned to EMCORE CORP (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SANDIA CORP | 9 | 1994–2004 |
| US ENERGY | 7 | 1987–1992 |
| EMCORE CORP | 1 | 2004 |
Locations
| Location | Patents | Span |
|---|---|---|
| Edgewood, NM, US | 16 | 1987–2004 |