Inventor
Daniel Delagebeaudeuf
Inventor
Paris, FR
Overview
Patents· 9 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices89%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
PatentTitleYear
5,367,183'Semiconductor device with complementary transistors'19944,977,434'Field-effect semiconductor device comprising an ancillary electrode'19904,974,038'Microwave transistor with double heterojunction'19904,872,049'Encapsulated low-noise ultra-high frequency semiconductor device'19894,471,366'Field effect transistor with high cut-off frequency and process for forming same'19844,455,564'Field effect transistor with a high cut-off frequency'19844,186,407'Heterojunction avalanche diode with a ternary alloy of gallium, indium and arsenic, and a binary alloy of indium and phosphorus'19804,176,366'Avalanche transit time diode with heterojunction structure'19793,992,715'Low-noise thermo-ionic injection diode'1976Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1976–1984Patents assigned to THOMSON CSF (5)· patent assignee history
1976–1984Based in Paris, FR· patent location history
1989–1990Patents assigned to THOMSON HYBRIDES MICROONDES (3)· patent assignee history
1989–1994Based in Saclay, FR· patent location history
1994Patents assigned to THOMSON CSF SEMICONDUCTEURS (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| THOMSON CSF | 5 | 1976–1984 |
| THOMSON HYBRIDES MICROONDES | 3 | 1989–1990 |
| THOMSON CSF SEMICONDUCTEURS | 1 | 1994 |
Locations
| Location | Patents | Span |
|---|---|---|
| Paris, FR | 5 | 1976–1984 |
| Saclay, FR | 4 | 1989–1994 |