Inventor
Mohamed Hassan Abu-Rahma
Inventor
San Diego, CA, US
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores37%
H01LSemiconductor devices9%
H03KPulse technique7%
H10BElectronic memory devices7%
H10DInorganic electric semiconductor devices7%
G01RMeasuring electric variables4%
G05FSystems for regulating electric or magnetic variables4%
G06FElectric digital data processing4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use4%
PatentTitleYear
10,720,193Technique to lower switching power of bit-lines by adiabatic charging of SRAM memories202010,630,290Low leakage power switch202010,523,194Low leakage power switch20199,922,699'Adaptive diode sizing techniques for reducing memory power leakage'20189,875,788Low-power 5T SRAM with improved stability and reduced bitcell size20189,865,330'Stable SRAM bitcell design utilizing independent gate FinFET'20189,786,357'Bit-cell voltage distribution system'20179,698,267'Fin-type device system and method'20179,673,786'Flip-flop with reduced retention voltage'20179,672,902'Bit-cell voltage control system'20179,453,879'On-die system for monitoring and predicting performance'20169,337,100'Apparatus and method to fabricate an electronic device'20169,224,453'Write-assisted memory with enhanced speed'20159,092,013'Time-to-digital converter'20159,052,725'Apparatus and method for controlling power supplied to circuits based on time delay to produce data'20159,019,751'Process tolerant circuits'20158,976,574'Process corner sensor for bit-cells'20158,796,777'Fin-type device system and method'20148,279,659'System and method of operating a memory device'20128,228,714'Memory device for resistance-based memory applications'20128,199,602'Systems and methods for dynamic power savings in electronic memory operation'20128,130,534'System and method to read and write data a magnetic tunnel junction element'20127,995,378'MRAM device with shared source line'20117,936,590'Digitally-controllable delay for sense amplifier'20117,929,334'In-situ resistance measurement for magnetic random access memory (MRAM)'20117,882,407'Adapting word line pulse widths in memory systems'20117,829,951'Method of fabricating a fin field effect transistor (FinFET) device'20107,791,976'Systems and methods for dynamic power savings in electronic memory operation'20107,672,175'System and method of selectively applying negative voltage to wordlines during memory device read operation'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2018Patents assigned to QUALCOMM INC (22)· patent assignee history
2010–2018Based in San Diego, CA, US· patent location history
2012–2018Patents assigned to ABU-RAHMA MOHAMED HASSAN (5)· patent assignee history
2012–2018Patents assigned to SONG SEUNG-CHUL (5)· patent assignee history
2012Patents assigned to PARK DONGKYU (4)· patent assignee history
2015–2020Based in Mountain View, CA, US· patent location history
2016–2020Patents assigned to APPLE INC (7)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| QUALCOMM INC | 22 | 2010–2018 |
| APPLE INC | 7 | 2016–2020 |
| ABU-RAHMA MOHAMED HASSANself | 5 | 2012–2018 |
| SONG SEUNG-CHUL | 5 | 2012–2018 |
| PARK DONGKYU | 4 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Diego, California, US | 18 | 2010–2018 |
| Mountain View, California, US | 11 | 2015–2020 |