Inventor
Daniel Bedau
Inventor
San Jose, CA, US
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices22%
H10NElectric solid-state devices not otherwise provided for22%
G11CStatic stores17%
H10BElectronic memory devices17%
H10DInorganic electric semiconductor devices8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
C12QMeasuring or testing processes involving enzymes, nucleic acids or microorganisms2%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
G01RMeasuring electric variables2%
G11BInformation storage based on relative movement between record carrier and transducer2%
PatentTitleYear
11,112,468Magnetoresistive sensor array for molecule detection and related detection schemes202111,004,508One selector one resistor RAM threshold voltage drift and offset voltage compensation methods202110,700,093Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same202010,644,066Sidewall insulated resistive memory devices202010,553,645Resistive memory device by substrate reduction202010,446,748Diffused resistive memory cell with buried active zone201910,388,646Electrostatic discharge protection devices including a field-induced switching element201910,069,068Diffused resistive memory cell with buried active zone201810,020,346Resistive memory device by substrate reduction20189,953,705Planar memory cell architectures in resistive memory devices20189,812,184'Current induced spin-momentum transfer stack with dual insulating layers'20179,721,636'Method for controlled switching of a MRAM device'20179,711,718'Nonvolatile bipolar junction memory cell'20179,449,668'Current induced spin-momentum transfer stack with dual insulating layers'20169,236,103'Bipolar spin-transfer switching'20168,941,196'Precessional reversal in orthogonal spin transfer magnetic RAM devices'20158,755,222'Bipolar spin-transfer switching'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2017Patents assigned to UNIV NEW YORK (5)· patent assignee history
2014Patents assigned to BEDAU DANIEL (1)· patent assignee history
2014–2016Based in New York, NY, US· patent location history
2015–2021Based in San Jose, CA, US· patent location history
2017–2021Patents assigned to WESTERN DIGITAL TECH INC (9)· patent assignee history
2018Patents assigned to HGST Netherlands BV (2)· patent assignee history
2019–2021Patents assigned to SANDISK TECHNOLOGIES LLC (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| WESTERN DIGITAL TECH INC | 9 | 2017–2021 |
| UNIV NEW YORK | 5 | 2014–2017 |
| SANDISK TECHNOLOGIES LLC | 3 | 2019–2021 |
| HGST Netherlands BV | 2 | 2018 |
| BEDAU DANIELself | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 15 | 2015–2021 |
| New York, New York, US | 2 | 2014–2016 |