Inventor
Chia-Cheng Ho
Inventor
Hsinchu, TW
Overview
Patents· 28 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices31%
H01LSemiconductor devices28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
G01RMeasuring electric variables4%
G01BMeasuring length, thickness or similar linear dimensions2%
A01NPreservation of bodies of humans or animals or plants or parts thereof1%
B82YSpecific uses or applications of nanostructures1%
C08BPolysaccharides1%
C08JWorking-up1%
PatentTitleYear
10,872,893Dual nitride stressor for semiconductor device and method of manufacturing202010,861,946Field plate structure for high voltage device202010,818,562Semiconductor structure and testing method thereof202010,797,174Semiconductor device with fin end spacer dummy gate and method of manufacturing the same202010,732,209Semiconductor test device and manufacturing method thereof202010,707,347Transistor with a negative capacitance and a method of creating the same202010,670,641Semiconductor test device and manufacturing method thereof202010,505,040Method of manufacturing a semiconductor device having a gate with ferroelectric layer201910,483,262Dual nitride stressor for semiconductor device and method of manufacturing201910,395,937Fin patterning for semiconductor devices201910,141,310Short channel effect suppression20189,911,850'FinFETs and the methods for forming the same'20189,887,100'Methods of forming semiconductor devices and structures thereof'20189,768,301'Short channel effect suppression'20179,728,461'Method of forming semiconductor device with different threshold voltages'20179,659,826'Asymmetric source/drain depths'20179,601,598'Method of manufacturing a fin-like field effect transistor (FinFET) device'20179,515,071'Asymmetric source/drain depths'20169,505,851'Antifungal composite and method for manufacturing the same'20169,379,217'FinFETs and the methods for forming the same'20169,349,652'Method of forming semiconductor device with different threshold voltages'20169,269,641'Monitor test key of epi profile'20169,029,958'FinFETs and the methods for forming the same'20158,906,710'Monitor test key of epi profile'20148,881,066'Mandrel modification for achieving single fin fin-like field effect transistor (FinFET) device'20148,796,759'Fin-like field effect transistor (FinFET) device and method of manufacturing same'20148,759,184'FinFETs and the methods for forming the same'20148,609,499'FinFETs and the methods for forming the same'2013Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2013–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (9)· patent assignee history
2013–2014Patents assigned to CHANG CHIH-SHENG (5)· patent assignee history
2013–2014Patents assigned to HO CHIA-CHENG (5)· patent assignee history
2013–2014Patents assigned to LIN YI-TANG (4)· patent assignee history
2013–2020Based in Hsinchu, TW· patent location history
2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (18)· patent assignee history
2016Based in Kaohsiung, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 18 | 2016–2020 |
| TAIWAN SEMICONDUCTOR MFG | 9 | 2013–2016 |
| CHANG CHIH-SHENG | 5 | 2013–2014 |
| HO CHIA-CHENGself | 5 | 2013–2014 |
| LIN YI-TANG | 4 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 27 | 2013–2020 |
| Kaohsiung, TW | 1 | 2016 |