Inventor

Tsuneo Ogura

Inventor
Kamakura, JP

Overview

81→
Patents
1986–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 81 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices50%
H01LSemiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
H03KPulse technique7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
E04BGeneral building constructions1%
F24FAir-conditioning1%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution1%
PatentTitleYear
10,573,733Semiconductor device202010,553,710Semiconductor device202010,468,511Semiconductor device201910,439,054Insulated gate bipolar transistor201910,411,099Semiconductor device for reduced on-state resistance201910,304,969Semiconductor device201910,141,455Semiconductor device201810,083,956Semiconductor device201810,032,874Semiconductor device with reduced on-state resistance20189,741,872'Semiconductor device'20179,634,128'Semiconductor device'20179,620,631'Power semiconductor device'20179,613,951'Semiconductor device with diode'20179,496,352'Semiconductor device'20169,391,070'Semiconductor device'20169,362,359'Semiconductor device'20169,337,189'Semiconductor device'20169,324,815'Semiconductor device'20169,318,588'Semiconductor device'20169,293,548'Semiconductor device'20169,224,844'Semiconductor device'20159,219,060'Semiconductor device'20159,214,535'Semiconductor device'20159,159,722'Semiconductor device'20159,130,007'Semiconductor device'20159,059,236'Semiconductor device'20159,054,066'Semiconductor device'20159,054,152'Semiconductor device'20159,029,918'Semiconductor device'20158,912,632'Semiconductor device'20148,853,775'Insulated gate bipolar transistor having control electrode disposed in trench'20148,664,692'Semiconductor device'20148,319,314'Semiconductor device'20128,217,420'Power semiconductor device'20127,915,617'Semiconductor device'20117,800,168'Power semiconductor device'20107,781,869'Semiconductor device having rectifying action'20107,772,641'Power semiconductor device with a plurality of gate electrodes'20107,531,871'Power semiconductor switching element'20097,456,487'Semiconductor device'20087,294,886'Power semiconductor device'20077,268,390'Power semiconductor device'20077,102,207'Semiconductor device having rectifying action'20067,067,870'Power semiconductor switching element'20067,049,658'Power semiconductor device'20066,891,224'Semiconductor device'20056,750,508'Power semiconductor switching element provided with buried electrode'20046,747,295'Semiconductor device with trench gate'20046,566,691'Semiconductor device with trench gate having structure to promote conductivity modulation'20036,534,998'Semiconductor device and control method thereof'20036,323,717'Semiconductor device, drive method, and drive apparatus'20016,268,990'Semiconductor protection device and power converting system'20016,153,896'Semiconductor device and control method thereof'20006,114,727'Semiconductor device'20005,994,739'Integrated circuit device'19995,960,286'Method of manufacturing power semiconductor devices'19995,883,402'Semiconductor device and protection method'19995,714,782'Composite integrated circuit device'19985,688,702'Process of making a semiconductor device using a silicon-on-insulator substrate'19975,477,065'Lateral thin film thyristor with bevel'19955,463,231'Method of operating thyristor with insulated gates'19955,428,228'Method of operating thyristor with insulated gates'19955,332,920'Dielectrically isolated high and low voltage substrate regions'19945,315,134'Thyristor with insulated gate'19945,223,442'Method of making a semiconductor device of a high withstand voltage'19935,159,427'Semiconductor substrate structure for use in power IC device'19925,156,981'Method of making a semiconductor device of a high withstand voltage'19925,144,401'Turn-on/off driving technique for insulated gate thyristor'19925,132,767'Double gate GTO thyristor'19925,097,314'Dielectrically isolated substrate with isolated high and low breakdown voltage elements'19925,072,287'Semiconductor device and method of manufacturing the same'19915,049,968'Dielectrically isolated substrate and semiconductor device using the same'19915,028,974'Semiconductor switching device with anode shortening structure'19914,994,696'Turn-on/off driving technique for insulated gate thyristor'19914,959,703'Turn-on/off driving technique for insulated gate thyristor'19904,866,315'Turn-on/off driving technique for insulated gate thyristor'19894,821,083'Thyristor drive system'19894,791,470'Reverse conducting gate turn-off thyristor device'19884,700,466'Method of manufacturing semiconductor device wherein silicon substrates are bonded together'19874,646,121'Thyristor with a self-protection function for breakover turn-on failure'19874,613,381'Method for fabricating a thyristor'1986

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1986–2020Patents assigned to TOSHIBA KK (80)· patent assignee history
1986–2020Based in Kamakura, JP· patent location history
1991–1999Based in Yokohama, JP· patent location history
2000Based in Kamakaura, JP· patent location history
2005–2020Based in Kanagawa, JP· patent location history
2012–2015Patents assigned to OGURA TSUNEO (5)· patent assignee history
2012Patents assigned to INOUE TOMOKI (1)· patent assignee history
2014Patents assigned to MATSUDAI TOMOKO (1)· patent assignee history
2019–2020Patents assigned to TOSHIBA ELECTRONIC DEVICES & STORAGE CORP (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK801986–2020
OGURA TSUNEOself52012–2015
TOSHIBA ELECTRONIC DEVICES & STORAGE CORP22019–2020
INOUE TOMOKI12012
MATSUDAI TOMOKO12014
Locations
LocationPatentsSpan
Kamakura, JP371986–2020
Kanagawa, JP262005–2020
Yokohama, JP171991–1999
Kamakaura, JP12000