Inventor
Martin M. Mitan
Inventor
Hillsboro, OR, US
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices30%
H01LSemiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
B82YSpecific uses or applications of nanostructures10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
PatentTitleYear
10,998,423Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping202110,971,600Selective gate spacers for semiconductor devices202110,896,852Methods for doping a sub-fin region of a semiconductor fin structure and devices containing the same202110,720,508Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping202010,396,176Selective gate spacers for semiconductor devices20196,750,124'Direct patterning of nanometer-scale silicide structures on silicon by ion-beam implantation through a thin barrier layer'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004Patents assigned to UNIV ARIZONA (1)· patent assignee history
2004Based in Phoenix, AZ, US· patent location history
2019–2021Patents assigned to INTEL CORP (5)· patent assignee history
2019–2021Based in Hillsboro, OR, US· patent location history
2020–2021Based in Beaverton, OR, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INTEL CORP | 5 | 2019–2021 |
| UNIV ARIZONA | 1 | 2004 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hillsboro, OR, US | 3 | 2019–2021 |
| Beaverton, OR, US | 2 | 2020–2021 |
| Phoenix, AZ, US | 1 | 2004 |