Inventor
Alexandros T. Demos
Inventor
Fremont, CA, US
Overview
Patents· 66 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
C23CCoating metallic material18%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H01LSemiconductor devices10%
H01JElectric discharge tubes or discharge lamps6%
H10DInorganic electric semiconductor devices4%
Y10TTechnical subjects covered by former us classification3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
B08BCleaning in general2%
B05DProcesses for applying fluent materials to surfaces, in general2%
PatentTitleYear
11,053,591Multi-port gas injection system and reactor system including same202110,797,133Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures202010,236,197Processing system containing an isolation region separating a deposition chamber from a treatment chamber201910,113,234UV assisted silylation for porous low-k film sealing20189,850,574Forming a low-k dielectric layer with reduced dielectric constant and strengthened mechanical properties20179,793,108'Interconnect integration for sidewall pore seal and via cleanliness'20179,659,765'Enhancement of modulus and hardness for UV-cured ultra low-k dielectric films'20179,646,876'Aluminum nitride barrier layer'20179,613,908'Ultra-thin dielectric diffusion barrier and etch stop layer for advanced interconnect applications'20179,580,801'Enhancing electrical property and UV compatibility of ultrathin blok barrier film'20179,506,145'Method and hardware for cleaning UV chambers'20169,502,263'UV assisted CVD AlN film for BEOL etch stop application'20169,391,024'Multi-layer dielectric stack for plasma damage protection'20169,364,871'Method and hardware for cleaning UV chambers'20169,324,571'Post treatment for dielectric constant reduction with pore generation on low K dielectric films'20169,312,167'Air-gap structure formation with ultra low-k dielectric layer on PECVD low-k chamber'20169,165,998'Adhesion layer to minimize dielectric constant increase with good adhesion strength in a PECVD process'20159,123,532'Low-k dielectric damage repair by vapor-phase chemical exposure'20159,058,980'UV-assisted photochemical vapor deposition for damaged low K films pore sealing'20158,993,444'Method to reduce dielectric constant of a porous low-k film'20158,911,553'Quartz showerhead for nanocure UV chamber'20148,877,659'Low-k dielectric damage repair by vapor-phase chemical exposure'20148,753,449'Enhancement in UV curing efficiency using oxygen-doped purge for ultra low-K dielectric film'20148,702,870'Superimposition of rapid periodic and extensive post multiple substrate UV-ozone clean sequences for high throughput and stable substrate to substrate performance'20148,664,061'Pulse method of oxidizing sidewall dielectrics for high capacitance applications'20148,657,961'Method for UV based silylation chamber clean'20148,492,170'UV assisted silylation for recovery and pore sealing of damaged low K films'20138,481,422'Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer'20138,455,849'Method and apparatus for modulating wafer treatment profile in UV chamber'20138,389,376'Air gap integration scheme'20138,349,746'Microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure'20138,236,684'Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer'20128,216,861'Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition'20128,058,183'Restoring low dielectric constant film properties'20117,998,536'Silicon precursors to make ultra low-K films of K<2.2 with high mechanical properties by plasma enhanced chemical vapor deposition'20117,989,033'Silicon precursors to make ultra low-K films with high mechanical properties by plasma enhanced chemical vapor deposition'20117,947,611'Method of improving initiation layer for low-k dielectric film by digital liquid flow meter'20117,879,683'Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay'20117,790,583'Clean process for an electron beam source'20107,777,197'Vacuum reaction chamber with x-lamp heater'20107,670,924'Air gap integration scheme'20107,615,482'Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength'20097,611,996'Multi-stage curing of low K nano-porous films'20097,588,803'Multi step ebeam process for modifying dielectric materials'20097,547,643'Techniques promoting adhesion of porous low K film to underlying barrier layer'20097,425,716'Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to a large area electron beam'20087,410,916'Method of improving initiation layer for low-k dielectric film by digital liquid flow meter'20087,323,399'Clean process for an electron beam source'20087,297,376'Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers'20077,265,062'Ionic additives for extreme low dielectric constant chemical formulations'20077,259,381'Methodology for determining electron beam penetration depth'20077,256,139'Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices'20077,049,606'Electron beam treatment apparatus'20067,045,798'Characterizing an electron beam treatment apparatus'20067,036,453'Apparatus for reducing plasma charge damage for plasma processes'20067,018,941'Post treatment of low k dielectric films'20066,936,551'Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices'20056,896,955'Ionic additives for extreme low dielectric constant chemical formulations'20056,890,403'Apparatus and process for controlling the temperature of a substrate in a plasma reactor'20056,878,644'Multistep cure technique for spin-on-glass films'20056,831,284'Large area source for uniform electron beam generation'20046,818,289'Mesoporous films having reduced dielectric constants'20046,660,662'Method of reducing plasma charge damage for plasma processes'20036,592,980'Mesoporous films having reduced dielectric constants'20036,576,568'Ionic additives for extreme low dielectric constant chemical formulations'20036,461,980'Apparatus and process for controlling the temperature of a substrate in a plasma reactor chamber'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2019Patents assigned to APPLIED MATERIALS INC (61)· patent assignee history
2002–2006Based in San Ramon, CA, US· patent location history
2003–2007Patents assigned to AIR PROD & CHEM (4)· patent assignee history
2003–2019Based in Fremont, CA, US· patent location history
2007Based in Pleasanton, CA, US· patent location history
2009–2017Based in Dublin, CA, US· patent location history
2011–2014Patents assigned to DEMOS ALEXANDROS T (12)· patent assignee history
2012–2014Patents assigned to CHAN KELVIN (5)· patent assignee history
2012–2013Patents assigned to YIM KANG SUB (5)· patent assignee history
2020–2021Based in Scottsdale, AZ, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 61 | 2002–2019 |
| DEMOS ALEXANDROS Tself | 12 | 2011–2014 |
| CHAN KELVIN | 5 | 2012–2014 |
| YIM KANG SUB | 5 | 2012–2013 |
| AIR PROD & CHEM | 4 | 2003–2007 |
Locations
| Location | Patents | Span |
|---|---|---|
| Fremont, California, US | 54 | 2003–2019 |
| San Ramon, California, US | 7 | 2002–2006 |
| Scottsdale, AZ, US | 2 | 2020–2021 |
| Dublin, California, US | 2 | 2009–2017 |
| Pleasanton, California, US | 1 | 2007 |