Inventor
Tobias Mono
Inventor
Dresden, DE
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
H10BElectronic memory devices17%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices13%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
G01NInvestigating or analysing materials by determining their chemical or physical properties4%
G06FElectric digital data processing4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
PatentTitleYear
7,871,943'Method of making transistor gates with controlled work function'20117,863,136'Method of manufacturing integrated circuits including a FET with a gate spacer and a fin'20117,718,475'Method for manufacturing an integrated circuit including a transistor'20107,622,354'Integrated circuit and method of manufacturing an integrated circuit'20097,618,867'Method of forming a doped portion of a semiconductor and method of forming a transistor'20097,107,562'Method and apparatus for the arrangement of contact-making elements of components of an integrated circuit, computer-readable storage medium and program element'20067,049,241'Method for forming a trench in a layer or a layer stack on a semiconductor wafer'20066,897,943'Method and apparatus for aerial image improvement in projection lithography using a phase shifting aperture'20056,828,647'Structure for determining edges of regions in a semiconductor wafer'20046,605,396'Resolution enhancement for alternating phase shift masks'20036,579,650'Method and apparatus for determining photoresist pattern linearity'20036,566,227'Strap resistance using selective oxidation to cap DT poly before STI etch'20036,551,874'Self-aligned STI process using nitride hard mask'20036,440,759'Method of measuring combined critical dimension and overlay in single step'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2009Patents assigned to INFINEON TECHNOLOGIES AG (10)· patent assignee history
2002–2011Based in Dresden, DE· patent location history
2003Based in Poughkeepsie, NY, US· patent location history
2009–2011Patents assigned to QIMONDA AG (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 10 | 2002–2009 |
| QIMONDA AG | 4 | 2009–2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Dresden, DE | 12 | 2002–2011 |
| Poughkeepsie, New York, US | 2 | 2003 |