Inventor
Fu-Tsun Tsai
Inventor
Tainan, TW
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10DInorganic electric semiconductor devices16%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation12%
G06FElectric digital data processing3%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
PatentTitleYear
10,903,336Semiconductor device and method of manufacturing the same202110,804,378Method for semiconductor device fabrication with improved epitaxial source/drain proximity control202010,608,094Semiconductor device and method of forming the same202010,361,287Method for manufacturing semiconductor device structure201910,096,672Semiconductor device having barrier layer to prevent impurity diffusion201810,056,455Semiconductor device and method of fabricating the same20189,768,221'Pad structure layout for semiconductor device'20179,728,598'Semiconductor device having barrier layer to prevent impurity diffusion'20179,666,555'Manufacturing method of forming a semiconductor wafer structure'20179,659,859'Metal pad offset for multi-layer metal layout'20179,627,426'Image sensor device and method for forming the same'20179,548,329'Backside illuminated image sensor and method of manufacturing the same'20179,490,345'Semiconductor device and manufacturing method thereof'20169,450,093'Semiconductor device structure and manufacturing method thereof'20169,406,499'Semiconductor wafer structure'20169,318,368'Photomask and method for forming dual STI structure by using the same'20169,293,490'Deep trench isolation with air-gap in backside illumination image sensor chips'20169,130,072'Backside illuminated image sensor and method of manufacturing the same'20159,093,430'Metal pad offset for multi-layer metal layout'2015Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2015–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (3)· patent assignee history
2015–2021Based in Tainan, TW· patent location history
2016–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (16)· patent assignee history
2017Based in Taipei, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 16 | 2016–2021 |
| TAIWAN SEMICONDUCTOR MFG | 3 | 2015–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tainan, TW | 18 | 2015–2021 |
| Taipei, TW | 1 | 2017 |