Inventor

Huang-Yi Huang

Inventor

Hsinchu, TW

Overview

36→

Patents

2007–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 36 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices29%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1027%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%

H10DInorganic electric semiconductor devices16%

C23CCoating metallic material4%

C23GCleaning or de-greasing of metallic material by chemical methods other than electrolysis2%

B82YSpecific uses or applications of nanostructures1%

H01JElectric discharge tubes or discharge lamps1%

Y10TTechnical subjects covered by former us classification1%

PatentTitleYear

10,879,075Wrap-around contact plug and method manufacturing same2020 10,714,334Conductive feature formation and structure2020 10,700,177Semiconductor device with low resistivity contact structure and method for forming the same2020 10,685,842Selective formation of titanium silicide and titanium nitride by hydrogen gas control2020 10,658,234Formation method of interconnection structure of semiconductor device2020 10,636,664Wrap-around contact plug and method manufacturing same2020 10,510,664Contact structure and formation thereof2019 10,475,654Wrap-around contact plug and method manufacturing same2019 10,468,260Wrap-around contact plug and method manufacturing same2019 10,283,359Systems and methods for gap filling improvement2019 10,103,099Semiconductor devices and methods of forming same2018 9,991,125Method for forming semiconductor device structure2018 9,966,448Method of making a silicide beneath a vertical structure2018 9,899,258'Metal liner overhang reduction and manufacturing method thereof'2018 9,873,944Metal capping process and processing platform thereof2018 9,805,968'Vertical structure having an etch stop over portion of the source'2017 9,735,107'Contact structure and formation thereof'2017 9,640,428'Self-aligned repairing process for barrier layer'2017 9,624,576'Systems and methods for gap filling improvement'2017 9,601,430'Semiconductor device structure and method for forming the same'2017 9,589,800'Method for integrated circuit patterning'2017 9,577,093'Vertical structure and method of forming semiconductor device'2017 9,576,892'Semiconductor devices and methods of forming same'2017 9,567,668'Plasma apparatus, magnetic-field controlling method, and semiconductor manufacturing method'2017 9,543,198'Structure and method for forming interconnect structure'2017 9,514,928'Selective repairing process for barrier layer'2016 9,487,864'Metal capping process and processing platform thereof'2016 9,478,631'Vertical-gate-all-around devices and method of fabrication thereof'2016 9,324,606'Self-aligned repairing process for barrier layer'2016 9,287,170'Contact structure and formation thereof'2016 9,218,986'Hard mask edge cover scheme'2015 9,166,001'Vertical structure and method of forming semiconductor device'2015 9,129,814'Method for integrated circuit patterning'2015 8,980,745'Interconnect structures and methods of forming same'2015 8,940,635'Structure and method for forming interconnect structure'2015 7,262,067'Method for conductive film quality evaluation'2007

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2007–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (8)· patent assignee history

2007–2020Based in Hsinchu, TW· patent location history

2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (29)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	29	2016–2020
TAIWAN SEMICONDUCTOR MFG	8	2007–2016

Locations

Location	Patents	Span
Hsinchu, TW	36	2007–2020