Inventor
Takekazu Masui
Inventor
Tokyo, JP
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth40%
C01GCompounds containing metals not covered by subclasses c01d or c01f13%
H01LSemiconductor devices13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds7%
H10DInorganic electric semiconductor devices7%
H10HInorganic light-emitting semiconductor devices having potential barriers7%
PatentTitleYear
10,526,721Method for growing b-GA202010,196,756b-Ga2O3 single-crystal substrate20199,926,647'Method for producing β-Ga2O3 substrate and method for producing crystal laminate structure including cutting out β-Ga2O3 based substrate from β-Ga2O3 based crystal'20189,926,646'Method for growing B-Ga2O3-based single crystal'20189,915,010'Method for cultivating β-Ga2O3-based single crystal, and β-Ga2O3-based single crystal substrate and method for producing same'20189,903,045'Method for growing β-Ga2O3-based single crystal'20189,431,489'β-Ga2O3-based single crystal substrate'2016Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2016–2020Patents assigned to KOHA CO LTD (6)· patent assignee history
2016–2020Patents assigned to TAMURA SEISAKUSHO KK (6)· patent assignee history
2016–2020Based in Tokyo, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| KOHA CO LTD | 6 | 2016–2020 |
| TAMURA SEISAKUSHO KK | 6 | 2016–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 7 | 2016–2020 |