LexDanaLexDanabeta
Inventor

Toshiro Hiraoka

Inventor
Yokohama, JP

Overview

54→
Patents
1996–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 54 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

Y10Tprimary
Y10TTechnical subjects covered by former us classification10%
B82YSpecific uses or applications of nanostructures8%
G11BInformation storage based on relative movement between record carrier and transducer8%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices5%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
C03CChemical composition of glasses, glazes or vitreous enamels4%
H01JElectric discharge tubes or discharge lamps4%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy4%
Y02PClimate change mitigation technologies in the production or processing of goods4%
PatentTitleYear
10,254,397Inspection apparatus and inspection system20199,859,553'Negative electrode active material for nonaqueous electrolyte secondary battery, nonaqueous electrolyte secondary battery, and battery pack'20189,318,737'Negative electrode material for non-aqueous electrolyte secondary battery, negative electrode active material for non-aqueous electrolyte secondary battery, and non-aqueous electrolyte secondary battery'20169,222,708'Magnetic refrigeration device and magnetic refrigeration system'20159,114,592'Method for manufacturing fine concave-convex pattern and sheet for manufacturing fine concave-convex pattern'20159,030,366'Radio apparatus and antenna device including magnetic material for isolation'20158,778,201'Method for manufacturing porous structure and method for forming pattern'20148,435,416'Method for manufacturing porous structure and method for forming pattern'20138,420,499'Concave-convex pattern forming method and magnetic tunnel junction element forming method'20138,394,877'Method for manufacturing porous structure and method for forming pattern'20138,377,551'Structure for recording medium'20138,323,520'Method for manufacturing fine concave-convex pattern and sheet for manufacturing fine concave-convex pattern'20128,269,205'Information recording and reproducing device'20128,237,145'Nonvolatile memory device with recording layer having two portions of different nitrogen amounts'20128,207,518'Information recording and reproducing device'20128,188,455'Information recording/reproducing device'20128,043,520'Method for manufacturing porous structure and method for forming pattern'20118,018,762'Information recording and reproducing apparatus'20118,014,189'Information recording/reproducing device'20117,995,382'Information recording and reproducing apparatus'20117,838,877'Information recording and reproducing apparatus'20107,786,665'Organic electroluminescent device having a diffraction grating for enhancing light extraction efficiency'20107,638,382'Storage apparatus and manufacturing method thereof'20097,517,466'Method for manufacturing porous structure and method for forming pattern'20097,414,417'Contact sheet for testing electronic parts, apparatus for testing electronic parts, method for testing electronic parts, method for manufacturing electronic parts and electronic parts'20087,370,412'Method for connecting electronic device'20087,329,458'Wiring member and method of manufacturing the same'20087,312,621'Semiconductor test unit having low contact resistance with examined electronic products, semiconductor contact board, method for testing semiconductor device, semiconductor device, and method for manufacturing thereof'20077,306,743'Recording medium, method of manufacturing recording medium and recording apparatus'20077,115,208'Method of manufacturing recording medium'20067,097,781'Method for manufacturing porous structure and method for forming pattern'20067,090,784'Method for manufacturing porous structure and method for forming pattern'20066,977,108'Recording medium including patterned tracks and isolation regions'20056,906,423'Mask used for exposing a porous substrate'20056,899,999'Method of manufacturing composite member, photosensitive composition, porous base material, insulating body and composite member'20056,835,889'Passive element component and substrate with built-in passive element'20046,709,806'Method of forming composite member'20046,649,516'Method for manufacturing a composite member from a porous substrate by selectively infiltrating conductive material into the substrate to form via and wiring regions'20036,626,724'Method of manufacturing electron emitter and associated display'20036,565,763'Method for manufacturing porous structure and method for forming pattern'20036,565,764'Method of manufacturing a material having a fine structure'20036,563,260'Electron emission element having resistance layer of particular particles'20036,465,742'Three dimensional structure and method of manufacturing the same'20026,456,416'Process and device for producing photonic crystal, and optical element'20026,391,471'Functional device and multi-component multi-phase type polymeric shaped material'20026,025,117'Method of forming a pattern using polysilane'20006,002,522'Optical functional element comprising photonic crystal'19995,907,382'Transparent conductive substrate and display apparatus'19995,866,471'Method of forming semiconductor thin film and method of fabricating solar cell'19995,858,541'Glass composite material, precursor thereof, nitrogen-containing composite material and optical device'19995,717,051'Glass composite material, precursor thereof, nitrogen-containing composite material and optical device'19985,565,041'Non-linear optical devices employing a polysilane composition and a polysilane composition therefor'19965,530,956'Non-linear optical devices employing a polysilane composition and a polysilane composition therefor'19965,482,656'Non-linear optical devices employing a polysilane composition and a polysilane composition therefor'1996

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1996–2019Patents assigned to TOSHIBA KK (53)· patent assignee history
1996–2018Based in Kanagawa, JP· patent location history
1998–2019Based in Yokohama, JP· patent location history
2003–2014Based in Tokyo, JP· patent location history
2004–2007Based in Fujisawa, JP· patent location history
2012–2015Patents assigned to HIRAOKA TOSHIRO (12)· patent assignee history
2012Patents assigned to AOKI SHINYA (4)· patent assignee history
2012Patents assigned to HIRAI TAKAHIRO (4)· patent assignee history
2012Patents assigned to KAMATA CHIKAYOSHI (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK531996–2019
HIRAOKA TOSHIROself122012–2015
AOKI SHINYA42012
HIRAI TAKAHIRO42012
KAMATA CHIKAYOSHI42012
Locations
LocationPatentsSpan
Yokohama, JP261998–2019
Kanagawa, JP181996–2018
Tokyo, JP52003–2014
Fujisawa, JP52004–2007