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Inventor

Chen-Chin Hsue

Inventor
Hsinchu, TW

Overview

3→
Patents
1994–1996
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices33%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1033%
G11CStatic stores17%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests17%
PatentTitleYear
5,541,876'Memory cell fabricated by floating gate structure'19965,378,654'Self-aligned contact process'19955,354,704'Symmetric SRAM cell with buried N+ local interconnection line'1994

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1994–1996Patents assigned to UNITED MICROELECTRONICS CORP (3)· patent assignee history
1994–1996Based in Hsinchu, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
UNITED MICROELECTRONICS CORP31994–1996
Locations
LocationPatentsSpan
Hsinchu, TW31994–1996