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Inventor

Takao Noda

Inventor
Kanagawa, JP

Overview

29→
Patents
1991–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 29 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices40%
H01LSemiconductor devices15%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy10%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
C01GCompounds containing metals not covered by subclasses c01d or c01f4%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds4%
A63BApparatus for physical training, gymnastics, swimming, climbing, or fencing2%
C04BLime, magnesia2%
C30BSingle-crystal growth2%
PatentTitleYear
9,620,600'Semiconductor device having termination region with laterally heterogeneous insulating films'20179,608,058'Semiconductor device'20179,385,243'Semiconductor device'20169,379,234'Semiconductor device'20169,142,687'Semiconductor diode device'20159,029,915'Nitride semiconductor device'20158,916,881'Semiconductor device and method for manufacturing semiconductor device'20148,866,151'Semiconductor device'20148,558,244'Semiconductor device and method for manufacturing semiconductor device'20138,390,030'Nitride semiconductor device'20138,227,834'Semiconductor device'20128,203,172'Nitride semiconductor device'20128,030,660'Semiconductor device'20117,935,983'Nitride semiconductor device'20117,728,354'Semiconductor device'20107,538,366'Nitride semiconductor device'20097,498,618'Nitride semiconductor device'20097,090,822'Cathode electroactive material, production method therefor and secondary cell'20066,936,870'Heterojunction type compound semiconductor field effect transistor and its manufacturing method'20056,919,589'HEMT with a graded InGaAlP layer separating ohmic and Schottky contacts'20056,890,456'Cathode electroactive material, production method therefor and secondary cell'20056,857,974'Repair tool for depression in putting green on golf course'20056,699,618'Cathode electroactive material, production method therefor and secondary cell'20046,673,491'Cathode electroactive material, production method therefor, and nonaqueous secondary cell using the same'20046,337,157'Cathode electroactive material, production method and nonaqueous secondary battery comprising the same'20026,072,203'Semiconductor device'20005,319,223'High electron mobility transistor'19945,168,077'Method of manufacturing a p-type compound semiconductor thin film containing a III-group element and a v-group element by metal organics chemical vapor deposition'19925,064,589'Method for producing high density hexagonal boron nitride sintered article'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–2006Patents assigned to SHOWA DENKO KK (5)· patent assignee history
1992–2017Patents assigned to TOSHIBA KK (22)· patent assignee history
1992–2005Based in Yokohama, JP· patent location history
2002–2006Based in Chiba, JP· patent location history
2005–2015Based in Kanagawa, JP· patent location history
2012–2014Patents assigned to NODA TAKAO (5)· patent assignee history
2012–2013Patents assigned to FUJIMOTO HIDETOSHI (3)· patent assignee history
2012–2013Patents assigned to SAITO WATARU (3)· patent assignee history
2014–2017Based in Himeji, JP· patent location history
2015Based in Hyogo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK221992–2017
NODA TAKAOself52012–2014
SHOWA DENKO KK51991–2006
FUJIMOTO HIDETOSHI32012–2013
SAITO WATARU32012–2013
Locations
LocationPatentsSpan
Kanagawa, JP122005–2015
Himeji, JP52014–2017
Chiba, JP52002–2006
Yokohama, JP41992–2005
Hyogo, JP12015