Inventor
Goro Nakatani
Inventor
Kyoto, JP
Overview
Patents· 52 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
B81BMicrostructural devices or systems, e.g. micromechanical devices14%
G01PMeasuring linear or angular speed, acceleration, deceleration, or shock11%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems9%
H04RLoudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers9%
Y10TTechnical subjects covered by former us classification7%
H10DInorganic electric semiconductor devices5%
G01LMeasuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
G01CMeasuring distances, levels or bearings3%
PatentTitleYear
11,097,554Thermal printhead and method of manufacturing the same202110,139,456MEMS sensor, method for manufacturing the same, and MEMS package including the same20189,520,505'Capacitance type MEMS sensor'20169,410,987'Probe card'20168,991,262'Capacitive pressure sensor, manufacturing method thereof, and pressure sensor package'20158,975,714'Capacitive pressure sensor and method of manufacturing the same'20158,975,090'Method for manufacturing a MEMS sensor'20158,970,242'Method for manufacturing probe card, probe card, method for manufacturing semiconductor device, and method for forming probe'20158,946,786'Semiconductor device and method for manufacturing same'20158,908,250'MEMS mirror device and method for manufacturing the same'20148,829,629'Capacitance type sensor'20148,807,712'Inkjet printer head'20148,809,980'Infrared sensor'20148,776,602'Acceleration sensor, semiconductor device and method of manufacturing semiconductor device'20148,735,948'Semiconductor device'20148,723,279'MEMS sensor, and MEMS sensor manufacturing method'20148,608,296'Inkjet printer head'20138,564,131'Semiconductor device and method for manufacturing the same'20138,513,746'MEMS sensor and method for producing MEMS sensor, and MEMS package'20138,387,459'MEMS sensor'20138,390,084'MEMS sensor'20138,359,928'Pressure sensor and method for manufacturing the pressure sensor'20138,276,449'Acceleration sensor and method of manufacturing acceleration sensor'20128,269,347'Semiconductor chip, electrode structure therefor and method for forming same'20128,174,085'Method of manufacturing MEMS sensor and MEMS sensor'20128,151,642'Semiconductor device'20128,148,792'Pressure sensor and method for manufacturing the pressure sensor'20128,080,835'Semiconductor device including a capacitance type sensor and method of manufacturing the same'20118,049,343'Semiconductor device and method of manufacturing the same'20118,039,911'MEMS sensor'20117,956,460'Semiconductor chip and method for manufacturing same, electrode structure of semiconductor chip and method for forming same, and semiconductor device'20117,943,506'Semiconductor device and production method therefor'20117,928,519'Method for manufacturing capacitive sensor, and capacitive sensor'20117,898,048'MEMS sensor'20117,898,044'MEMS sensor and production method of MEMS sensor'20117,880,367'MEMS sensor'20117,845,229'Acceleration sensor'20107,825,483'MEMS sensor and production method of MEMS sensor'20107,795,128'Method of manufacturing a semiconductor device having an enhanced electrode pad structure'20107,765,870'Acceleration sensor and method of manufacturing the same'20107,759,803'Semiconductor device and method of manufacturing the same'20107,735,368'Acceleration sensor'20107,662,713'Semiconductor device production method that includes forming a gold interconnection layer'20107,372,163'Semiconductor device and production method therefor'20087,335,989'Semiconductor device and production method therefor'20087,244,635'Semiconductor device and method of manufacturing the same'20077,151,312'Semiconductor device and method of manufacturing the same'20067,045,900'Semiconductor chip and production thereof, and semiconductor device having semiconductor chip bonded to solid device'20066,847,117'Semiconductor device including a passivation film to cover directly an interface of a bump and an intermediated layer'20056,794,732'Semiconductor device and method of manufacturing the same'20046,724,084'Semiconductor chip and production thereof, and semiconductor device having semiconductor chip bonded to solid device'20046,462,420'Semiconductor chip and semiconductor device having a chip-on-chip structure'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2021Patents assigned to ROHM CO LTD (51)· patent assignee history
2002–2018Based in Kyoto, JP· patent location history
2011–2016Patents assigned to NAKATANI GORO (20)· patent assignee history
2013–2014Patents assigned to OKADA MIZUHO (3)· patent assignee history
2013–2014Patents assigned to YAMASHITA NOBUHISA (2)· patent assignee history
2013Patents assigned to FUJITA TOMA (1)· patent assignee history
2021Based in Kyoto-shi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ROHM CO LTD | 51 | 2002–2021 |
| NAKATANI GOROself | 20 | 2011–2016 |
| OKADA MIZUHO | 3 | 2013–2014 |
| YAMASHITA NOBUHISA | 2 | 2013–2014 |
| FUJITA TOMA | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kyoto, JP | 51 | 2002–2018 |
| Kyoto-shi, JP | 1 | 2021 |