Inventor
Ying-Wei Yen
Inventor
Miao-Li County, TW
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices42%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%
H01LSemiconductor devices13%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
B82YSpecific uses or applications of nanostructures2%
H01JElectric discharge tubes or discharge lamps2%
PatentTitleYear
9,634,083'Semiconductor structure and process thereof'20178,921,238'Method for processing high-k dielectric layer'20148,895,435'Polysilicon layer and method of forming the same'20148,889,523'Semiconductor process'20148,802,579'Semiconductor structure and fabrication method thereof'20148,741,784'Process for fabricating semiconductor device and method of fabricating metal oxide semiconductor device'20148,614,152'Gate structure and a method for forming the same'20138,536,038'Manufacturing method for metal gate using ion implantation'20138,501,636'Method for fabricating silicon dioxide layer'20138,426,277'Semiconductor process'20138,394,688'Process for forming repair layer and MOS transistor having repair layer'20138,263,501'Silicon dioxide film fabricating process'20128,232,605'Method for gate leakage reduction and Vt shift control and complementary metal-oxide-semiconductor device'20127,811,892'Multi-step annealing process'20107,709,316'Method of fabricating gate structure'20107,601,404'Method for switching decoupled plasma nitridation processes of different doses'20097,435,640' Method of fabricating gate structure'20087,335,548'Method of manufacturing metal-oxide-semiconductor transistor'20087,312,139'Method of fabricating nitrogen-containing gate dielectric layer and semiconductor device'20077,265,065'Method for fabricating dielectric layer doped with nitrogen'20077,214,631'Method of forming gate dielectric layer'20077,037,773'Method of manufacturing metal-oxide-semiconductor transistor'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2017Patents assigned to UNITED MICROELECTRONICS CORP (22)· patent assignee history
2006–2017Based in Miao-Li County, TW· patent location history
2007–2012Based in Miaoli, TW· patent location history
2012–2014Patents assigned to LIN CHIEN-LIANG (12)· patent assignee history
2012–2014Patents assigned to YEN YING-WEI (12)· patent assignee history
2012–2014Patents assigned to WANG YU-REN (11)· patent assignee history
2013–2014Patents assigned to Wang shao-wei (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 22 | 2006–2017 |
| LIN CHIEN-LIANG | 12 | 2012–2014 |
| YEN YING-WEIself | 12 | 2012–2014 |
| WANG YU-REN | 11 | 2012–2014 |
| Wang shao-wei | 5 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Miao-Li County, TW | 19 | 2006–2017 |
| Miaoli, TW | 3 | 2007–2012 |