Inventor
Yutaka Hoshino
Inventor
Akishima, JP
Overview
Patents· 48 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices25%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%
H10BElectronic memory devices10%
G11CStatic stores8%
H03FAmplifiers8%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
G02BOptical elements, systems or apparatus6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
H01LSemiconductor devices2%
A61KPreparations for medical, dental or toiletry purposes1%
PatentTitleYear
11,036,024Method for manufacturing intermittent bonding type optical fiber ribbon and intermittent bonding type optical fiber ribbon202110,859,780Optical fiber unit, optical fiber cable, and method for manufacturing optical fiber unit202010,823,930Optical fiber cable and optical fiber cable manufacturing method202010,101,549Optical fiber cable201810,061,095Indoor cable used as optical fiber cable20189,989,723Loose tube-type optical fiber unit20189,795,549'1,2-alkane polyol-containing composition'20179,324,734'Semiconductor device having semiconductor layers with different thicknesses'20169,159,807'Semiconductor device and manufacturing method thereof'20158,962,418'Manufacturing method of semiconductor device having semiconductor layers with different thicknesses'20158,842,955'Optical fiber cable'20148,837,886'Optical fiber cable having a sheath and for setting in a conduit'20148,779,855'Power amplification circuit having transformer'20148,482,058'Semiconductor device including a power MISFET'20138,461,927'Power amplification circuit having transformer'20138,344,454'Semiconductor device'20138,330,544'Power amplification circuit having transformer'20128,232,595'Semiconductor device including a power MISFET and method of manufacturing the same'20128,134,408'Power amplification circuit having transformer'20128,129,784'Semiconductor device'20128,080,831'Semiconductor device and manufacturing the same'20117,994,567'Semiconductor device and a method of manufacturing the same'20117,982,263'Semiconductor device having a plurality of misfets formed on a main surface of a semiconductor substrate'20117,791,131'Semiconductor device and a method of manufacturing the same'20107,741,656'Semiconductor device and manufacturing the same'20107,671,381'Semiconductor device and manufacturing the same'20107,598,558'Method of manufacturing semiconductor integrated circuit device having capacitor element'20097,510,941'Semiconductor device and manufacturing method of the same'20097,479,681'Multilayered semiconductor structure containing a MISFET, a resistor, a capacitor, and an inductor'20097,323,735'Method of manufacturing semiconductor integrated circuit device having capacitor element'20087,217,987'Semiconductor device and manufacturing the same'20077,199,433'Method of manufacturing semiconductor integrated circuit device having capacitor element'20077,176,523'Power mosfet having conductor plug structured contacts'20077,176,520'Semiconductor device and a method of manufacturing the same'20077,087,977'Semiconductor device including multiple wiring layers and circuits operating in different frequency bands'20067,030,449'Semiconductor integrated circuit device having capacitor element'20066,797,594'Semiconductor device and method of manufacturing the same'20046,737,712'Method of manufacturing semiconductor integrated circuit device having capacitor element'20046,605,842'Semiconductor device and a method of manufacturing the same'20036,528,848'Semiconductor device and a method of manufacturing the same'20036,476,453'Semiconductor integrated circuit device having capacitor element'20026,396,111'Semiconductor integrated circuit device having capacitor element'20026,245,611'Process for manufacturing semiconductor integrated circuit device'20016,030,865'Process for manufacturing semiconductor integrated circuit device'20005,780,910'SRAM with stacked capacitor spaced from gate electrodes'19985,780,328'Process for producing semiconductor integrated circuit'19985,447,268'Method of fusing commutator risers to armature coil in electric motor'19954,613,628'Resin composition for closed-cell foam and cured resin foam prepared by using said resin composition'1986Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2004Patents assigned to HITACHI LTD (9)· patent assignee history
1998–2009Based in Higashimurayama, JP· patent location history
2003–2013Based in Akishima, JP· patent location history
2004–2010Patents assigned to RENESAS TECH CORP (10)· patent assignee history
2009–2012Based in Akishiama, JP· patent location history
2010–2016Patents assigned to RENESAS ELECTRONICS CORP (15)· patent assignee history
2011–2015Patents assigned to HOSHINO YUTAKA (10)· patent assignee history
2012–2021Based in Tokyo, JP· patent location history
2013–2016Based in Kanagawa, JP· patent location history
2014–2021Patents assigned to FURUKAWA ELECTRIC CO LTD (8)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| RENESAS ELECTRONICS CORP | 15 | 2010–2016 |
| HOSHINO YUTAKAself | 10 | 2011–2015 |
| RENESAS TECH CORP | 10 | 2004–2010 |
| HITACHI LTD | 9 | 1998–2004 |
| FURUKAWA ELECTRIC CO LTD | 8 | 2014–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Akishima, JP | 16 | 2003–2013 |
| Higashimurayama, JP | 11 | 1998–2009 |
| Tokyo, JP | 10 | 2012–2021 |
| Kanagawa, JP | 5 | 2013–2016 |
| Akishiama, JP | 2 | 2009–2012 |