Inventor
Yongping Ding
Inventor
San Jose, CA, US
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
H01LSemiconductor devices25%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
Y10TTechnical subjects covered by former us classification2%
PatentTitleYear
10,665,711High-electron-mobility transistor with buried interconnect202010,522,666Methods for fabricating anode shorted field stop insulated gate bipolar transistor201910,381,473High-electron-mobility transistor with buried interconnect201910,115,814Process method and structure for high voltage MOSFETs201810,050,134Methods for fabricating anode shorted field stop insulated gate bipolar transistor20189,997,593Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof20189,887,283'Process method and structure for high voltage MOSFETs'20189,865,678'High voltage field balance metal oxide field effect transistor (FBM)'20189,755,052'Process method and structure for high voltage MOSFETS'20179,704,948'Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof'20179,627,526'Assymetric poly gate for optimum termination design in trench power MOSFETs'20179,478,646'Methods for fabricating anode shorted field stop insulated gate bipolar transistor'20169,450,083'High voltage field balance metal oxide field effect transistor (FBM)'20169,431,495'Method of forming SGT MOSFETs with improved termination breakdown voltage'20169,129,822'High voltage field balance metal oxide field effect transistor (FBM)'20158,803,251'Termination of high voltage (HV) devices with new configurations and methods'20148,785,279'High voltage field balance metal oxide field effect transistor (FBM)'20148,716,069'Semiconductor device employing aluminum alloy lead-frame with anodized aluminum'20148,697,520'Method of forming an asymmetric poly gate for optimum termination design in trench power MOSFETS'20148,587,061'Power MOSFET device with self-aligned integrated Schottky diode'20138,252,648'Power MOSFET device with self-aligned integrated Schottky and its manufacturing method'2012Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2012–2019Patents assigned to ALPHA & OMEGA SEMICONDUCTOR (18)· patent assignee history
2012–2018Patents assigned to DING YONGPING (10)· patent assignee history
2012–2017Patents assigned to LEE YEEHENG (5)· patent assignee history
2012–2018Patents assigned to CHEN JOHN (4)· patent assignee history
2012–2019Based in San Jose, CA, US· patent location history
2014–2017Patents assigned to BOBDE MADHUR (4)· patent assignee history
2014–2018Based in Sunnyvale, CA, US· patent location history
2019–2020Based in Santa Clara, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ALPHA & OMEGA SEMICONDUCTOR | 18 | 2012–2019 |
| DING YONGPINGself | 10 | 2012–2018 |
| LEE YEEHENG | 5 | 2012–2017 |
| BOBDE MADHUR | 4 | 2014–2017 |
| CHEN JOHN | 4 | 2012–2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 14 | 2012–2019 |
| Sunnyvale, California, US | 5 | 2014–2018 |
| Santa Clara, California, US | 2 | 2019–2020 |