Inventor
Masayuki Kohno
Inventor
Amagasaki, JP
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10DInorganic electric semiconductor devices20%
H01JElectric discharge tubes or discharge lamps18%
H10BElectronic memory devices4%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light2%
G11CStatic stores2%
H01LSemiconductor devices2%
H05HPlasma technique2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
PatentTitleYear
10,504,698Plasma processing apparatus201910,312,057Plasma processing apparatus20199,412,565'Temperature measuring method and plasma processing system'20169,412,607'Plasma etching method'20168,569,186'Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device'20138,366,953'Plasma cleaning method and plasma CVD method'20138,329,596'Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device'20128,318,614'Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatus'20128,258,571'MOS semiconductor memory device having charge storage region formed from stack of insulating films'20128,138,103'Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device'20128,124,484'Forming a MOS memory device having a dielectric film laminate as a charge accumulation region'20128,119,545'Forming a silicon nitride film by plasma CVD'20128,114,790'Plasma CVD method, silicon nitride film formation method, semiconductor device manufacturing method, and plasma CVD apparatus'20127,771,796'Plasma processing method and film forming method'20107,763,551'RLSA CVD deposition control using halogen gas for hydrogen scavenging'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2019Patents assigned to TOKYO ELECTRON LTD (15)· patent assignee history
2010–2013Based in Amagasaki, JP· patent location history
2012–2013Patents assigned to KOHNO MASAYUKI (8)· patent assignee history
2012–2013Patents assigned to NAKANISHI TOSHIO (8)· patent assignee history
2012–2013Patents assigned to NISHITA TATSUO (7)· patent assignee history
2012Patents assigned to HONDA MINORU (3)· patent assignee history
2012Based in Nirasaki, JP· patent location history
2016Based in Miyagi, JP· patent location history
2016Based in Hopewell Junction, NY, US· patent location history
2019Based in Austin, TX, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOKYO ELECTRON LTD | 15 | 2010–2019 |
| KOHNO MASAYUKIself | 8 | 2012–2013 |
| NAKANISHI TOSHIO | 8 | 2012–2013 |
| NISHITA TATSUO | 7 | 2012–2013 |
| HONDA MINORU | 3 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Amagasaki, JP | 10 | 2010–2013 |
| Austin, Texas, US | 2 | 2019 |
| Miyagi, JP | 1 | 2016 |
| Hopewell Junction, New York, US | 1 | 2016 |
| Nirasaki, JP | 1 | 2012 |