Inventor
Matthew J. Rutten
Inventor
Milton, VT, US
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1023%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
B24BMachines, devices, or processes for grinding or polishing19%
H10DInorganic electric semiconductor devices13%
H01JElectric discharge tubes or discharge lamps6%
C09KMaterials for miscellaneous applications, not provided for elsewhere4%
C23CCoating metallic material4%
H10BElectronic memory devices4%
B08BCleaning in general2%
B24DTools for grinding, buffing or sharpening2%
PatentTitleYear
6,838,364'Sputtered tungsten diffusion barrier for improved interconnect robustness'20056,503,827'Method of reducing planarization defects'20036,495,917'Method and structure of column interconnect'20026,245,668'Sputtered tungsten diffusion barrier for improved interconnect robustness'20016,171,436'Apparatus for removing slurry particles'20016,110,832'Method and apparatus for slurry polishing'20006,071,803'Electrical contact to buried SOI structures'20006,008,083'Precision analog metal-metal capacitor'19995,928,062'Vertical polishing device and method'19995,913,713'CMP polishing pad backside modifications for advantageous polishing results'19995,896,870'Method of removing slurry particles'19995,889,293'Electrical contact to buried SOI structures'19995,877,589'Gas discharge devices including matrix materials with ionizable gas filled sealed cavities'19995,876,266'Polishing pad with controlled release of desired micro-encapsulated polishing agents'19995,722,879'Variable travel carrier device and method for planarizing semiconductor wafers'19985,708,559'Precision analog metal-metal capacitor'19985,704,987'Process for removing residue from a semiconductor wafer after chemical-mechanical polishing'19985,676,587'Selective polish process for titanium, titanium nitride, tantalum and tantalum nitride'19975,585,674'Transverse diffusion barrier interconnect structure'19965,549,511'Variable travel carrier device and method for planarizing semiconductor wafers'19965,530,262'Bidirectional field emission devices, storage structures and fabrication methods'19965,488,013'Method of forming transverse diffusion barrier interconnect structure'19965,312,777'Fabrication methods for bidirectional field emission devices and storage structures'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994–2005Patents assigned to IBM (23)· patent assignee history
1994–2005Based in Milton, VT, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 23 | 1994–2005 |
Locations
| Location | Patents | Span |
|---|---|---|
| Milton, VT, US | 23 | 1994–2005 |