Inventor

FRANK FOURNEL

Inventor
FR

Overview

20→
Patents
2022–2026
Patent span
Electricity
Primary field (CPC H)

Patents· 20 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form7%
C09JAdhesives6%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light3%
H10DInorganic electric semiconductor devices3%
B81BMicrostructural devices or systems, e.g. micromechanical devices1%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems1%
PatentTitleYear
12,577,434Method for bonding two hydrophilic surfaces202612,575,386Method for direct hydrophilic bonding of substrates202612,532,717Cationic elements-assisted direct bonding method202612,463,174Method for bonding chips to a substrate by direct bonding202512,424,497Method for transferring a layer from a source substrate to a destination substrate202512,417,942Process for hydrophilically bonding substrates202512,412,786Method for transferring a layer from a source substrate to a destination substrate202512,322,717Semiconductor device and method for manufacturing a semiconductor device202512,227,679Surface activated bonding method by ion or atom bombardment of a first surface of a first substrate to a second surface of a second substrate202511,715,710Method of treatment of an electronic circuit for a hybrid molecular bonding202311,710,653Method for manufacturing a handle substrate intended for temporary bonding of a substrate202311,694,991Method for transferring chips202311,575,063Method for fabricating a detection device comprising a step of direct bonding of a thin sealing layer provided with a getter material202311,569,115Temporary bonding method202311,562,899Method for transferring thin layers202311,551,976Thin-film transfer method202311,482,567LED emissive display device and method for producing such a device202211,346,722Method for fabricating a detection device comprising a step of transferring and direct bonding of a thin layer provided with a getter material202211,335,584Method of dismantling a stack of at least three substrates202211,244,971Method of transferring a thin film from a substrate to a flexible support2022

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2022–2026Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (20)· patent assignee history
2022–2026Based in FR· patent location history
2025Patents assigned to AMS AG (1)· patent assignee history
2025Patents assigned to COMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (1)· patent assignee history
2025Patents assigned to SOITEC SILICON ON INSULATOR (1)· patent assignee history
2025Based in AT· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
COMMISSARIAT ENERGIE ATOMIQUE202022–2026
AMS AG12025
COMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES12025
SOITEC SILICON ON INSULATOR12025
Locations
LocationPatentsSpan
FR192022–2026
AT12025