Inventor
Hongching Shan
Inventor
San Jose, CA, US
Overview
Patents· 34 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps42%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1028%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
C23CCoating metallic material5%
H02NElectric machines not otherwise provided for5%
H05HPlasma technique5%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
PatentTitleYear
8,413,604'Slotted electrostatic shield modification for improved etch and CVD process uniformity'20137,232,767'Slotted electrostatic shield modification for improved etch and CVD process uniformity'20077,105,442'Ashable layers for reducing critical dimensions of integrated circuit features'20066,825,618'Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply'20046,797,639'Dielectric etch chamber with expanded process window'20046,716,302'Dielectric etch chamber with expanded process window'20046,689,249'Shield or ring surrounding semiconductor workpiece in plasma chamber'20046,613,691'Highly selective oxide etch process using hexafluorobutadiene'20036,568,346'Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply'20036,513,452'Adjusting DC bias voltage in plasma chamber'20036,432,259'Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates'20026,403,491'Etch method using a dielectric etch chamber with expanded process window'20026,387,288'High selectivity etch using an external plasma discharge'20026,284,093'Shield or ring surrounding semiconductor workpiece in plasma chamber'20016,273,022'Distributed inductively-coupled plasma source'20016,221,782'Adjusting DC bias voltage in plasma chamber'20016,189,484'Plasma reactor having a helicon wave high density plasma source'20016,174,451'Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons'20016,113,731'Magnetically-enhanced plasma chamber with non-uniform magnetic field'20006,076,482'Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion'20006,074,514'High selectivity etch using an external plasma discharge'20006,022,446'Shallow magnetic fields for generating circulating electrons to enhance plasma processing'20005,989,349'Diagnostic pedestal assembly for a semiconductor wafer processing system'19995,948,168'Distributed microwave plasma reactor for semiconductor processing'19995,865,937'Broad-band adjustable power ratio phase-inverting plasma reactor'19995,843,847'Method for etching dielectric layers with high selectivity and low microloading'19985,814,563'Method for etching dielectric using fluorohydrocarbon gas, NH.sub.3 -generating gas, and carbon-oxygen gas'19985,740,009'Apparatus for improving wafer and chuck edge protection'19985,702,530'Distributed microwave plasma reactor for semiconductor processing'19975,683,517'Plasma reactor with programmable reactant gas distribution'19975,674,321'Method and apparatus for producing plasma uniformity in a magnetic field-enhanced plasma reactor'19975,605,637'Adjustable dc bias control in a plasma reactor'19975,585,012'Self-cleaning polymer-free top electrode for parallel electrode etch operation'19965,514,247'Process for plasma etching of vias'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–2006Patents assigned to APPLIED MATERIALS INC (30)· patent assignee history
1996–2004Based in San Jose, CA, US· patent location history
2002–2013Based in Cupertino, CA, US· patent location history
2007–2013Patents assigned to MATTSON TECH INC (2)· patent assignee history
2013Patents assigned to DEVINE DANIEL J (1)· patent assignee history
2013Patents assigned to GEORGE RENE (1)· patent assignee history
2013Patents assigned to KADAVANICH ANDREAS (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 30 | 1996–2006 |
| MATTSON TECH INC | 2 | 2007–2013 |
| DEVINE DANIEL J | 1 | 2013 |
| GEORGE RENE | 1 | 2013 |
| KADAVANICH ANDREAS | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 28 | 1996–2004 |
| Cupertino, California, US | 6 | 2002–2013 |