Inventor
Frederic Boeuf
Inventor
Le Versoud, FR
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices17%
H10DInorganic electric semiconductor devices17%
G02BOptical elements, systems or apparatus12%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein12%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
B82YSpecific uses or applications of nanostructures5%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light5%
H02SGeneration of electric power by conversion of infrared radiation, visible light or ultraviolet light, e.g. using photovoltaic [pv] modules5%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution5%
PatentTitleYear
10,823,986Photonic devices and methods of fabrication thereof202010,690,947Photonic devices and methods of fabrication thereof202010,686,297Germanium-on-silicon laser in CMOS technology202010,656,331Integrated photonic device with improved optical coupling202010,393,958Electro-optic device with multiple photonic layers and related methods201910,381,478Method of localized modification of the stresses in a substrate of the SOI type, in particular FD SOI type, and corresponding device201910,359,652Integrated electro-optic modulator201910,126,497Integrated photonic device with improved optical coupling201810,042,115Electro-optic device with multiple photonic layers and related methods20189,911,820'Method for fabrication of a field-effect with reduced stray capacitance'20189,891,450'Integrated electro-optic modulator'20189,653,538'Method of localized modification of the stresses in a substrate of the SOI type, in particular FD SOI type, and corresponding device'20179,411,176'Oxide capacitor electro-optical phase shifter'20168,288,754'Quantum-dot device and position-controlled quantum-dot-fabrication method'20127,776,679'Method for forming silicon wells of different crystallographic orientations'20107,579,254'Process for realizing an integrated electronic circuit with two active layer portions having different crystal orientations'20096,852,993'Emission process for a single photon, corresponding semiconducting device and manufacturing process'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2018Patents assigned to ST MICROELECTRONICS SA (4)· patent assignee history
2005Based in Grenoble, FR· patent location history
2009–2012Patents assigned to ST MICROELECTRONICS CROLLES 2 (3)· patent assignee history
2009–2020Based in Le Versoud, FR· patent location history
2012Patents assigned to BIDAL GREGORY (1)· patent assignee history
2012Based in Eindhoven, NL· patent location history
2016–2020Patents assigned to ST MICROELECTRONICS CROLLES 2 SAS (13)· patent assignee history
2017–2019Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ST MICROELECTRONICS CROLLES 2 SAS | 13 | 2016–2020 |
| ST MICROELECTRONICS SA | 4 | 2005–2018 |
| COMMISSARIAT ENERGIE ATOMIQUE | 3 | 2017–2019 |
| ST MICROELECTRONICS CROLLES 2 | 3 | 2009–2012 |
| BIDAL GREGORY | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Le Versoud, FR | 15 | 2009–2020 |
| Eindhoven, NL | 1 | 2012 |
| Grenoble, FR | 1 | 2005 |