Inventor
Richard Burton
Inventor
Phoenix, AZ, US
Overview
Patents· 31 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices37%
H01LSemiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H03KPulse technique4%
C23CCoating metallic material3%
H03FAmplifiers3%
H04BTransmission3%
H01FMagnets1%
H10HInorganic light-emitting semiconductor devices having potential barriers1%
PatentTitleYear
11,018,216High voltage capacitor and method202110,879,357Method for making a semiconductor device having a hyper-abrupt junction region including a superlattice202010,879,356Method for making a semiconductor device including enhanced contact structures having a superlattice202010,868,120Method for making a varactor with hyper-abrupt junction region including a superlattice202010,854,717Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance202010,847,618Semiconductor device including body contact dopant diffusion blocking superlattice having reduced contact resistance202010,840,337Method for making a FINFET having reduced contact resistance202010,840,336Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods202010,840,335Method for making semiconductor device including body contact dopant diffusion blocking superlattice to reduce contact resistance202010,840,388Varactor with hyper-abrupt junction region including a superlattice202010,825,902Varactor with hyper-abrupt junction region including spaced-apart superlattices202010,825,901Semiconductor devices including hyper-abrupt junction region including a superlattice202010,818,755Method for making semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance202010,777,451Semiconductor device including enhanced contact structures having a superlattice202010,692,853Electrostatic discharge (ESD) robust transistors and related methods202010,637,468Galvanically-isolated signaling between modules with step-up transformer202010,593,761Method for making a semiconductor device having reduced contact resistance202010,580,867FINFET including source and drain regions with dopant diffusion blocking superlattice layers to reduce contact resistance202010,580,866Semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance202010,411,086High voltage capacitor and method201910,008,457Resonance-coupled signaling between IC modules20189,954,523Receiver for resonance-coupled signaling20187,955,943'High voltage sensor device and method therefor'20116,858,522'Electrical contact for compound semiconductor device and method for forming same'20056,768,140'Structure and method in an HBT for an emitter ballast resistor with improved characteristics'20046,673,687'Method for fabrication of a heterojunction bipolar transistor'20046,614,117'Method for metallization of a semiconductor substrate and related structure'20036,596,635'Method for metallization of a semiconductor substrate'20036,573,599'Electrical contact for compound semiconductor device and method for forming same'20036,531,721'Structure for a heterojunction bipolar transistor'20035,667,632'Method of defining a line width'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997Patents assigned to MOTOROLA INC (1)· patent assignee history
1997Based in Tempe, AZ, US· patent location history
2003–2005Patents assigned to SKYWORKS SOLUTIONS INC (7)· patent assignee history
2003–2005Based in Newbury Park, CA, US· patent location history
2003Based in Thousand Oaks, CA, US· patent location history
2011Patents assigned to SEMICONDUCTOR COMPONENTS IND (1)· patent assignee history
2011–2021Based in Phoenix, AZ, US· patent location history
2018–2021Patents assigned to SEMICONDUCTOR COMPONENTS IND LLC (6)· patent assignee history
2020Patents assigned to ATOMERA INC (16)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ATOMERA INC | 16 | 2020 |
| SKYWORKS SOLUTIONS INC | 7 | 2003–2005 |
| SEMICONDUCTOR COMPONENTS IND LLC | 6 | 2018–2021 |
| MOTOROLA INC | 1 | 1997 |
| SEMICONDUCTOR COMPONENTS IND | 1 | 2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Phoenix, AZ, US | 23 | 2011–2021 |
| Newbury Park, California, US | 5 | 2003–2005 |
| Thousand Oaks, California, US | 2 | 2003 |
| Tempe, AZ, US | 1 | 1997 |