Inventor
RALF SIEMIENIEC
Inventor
AT
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices41%
H01LSemiconductor devices39%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
B82YSpecific uses or applications of nanostructures3%
PatentTitleYear
12,471,302Silicon carbide device with trench gate structure202512,463,037Method of manufacturing ohmic contacts on a silicon carbide (SIC) substrate, method of manufacturing a semiconductor device, and semiconductor device202512,426,350Semiconductor device with diode chain connected to gate metallization202512,419,096Transistor device and method of manufacturing202512,408,410Silicon carbide device with stripe-shaped gate electrode and source metallization202512,295,156Semiconductor device including trench gate structure and buried shielding region and method of manufacturing202512,057,473Silicon carbide device with transistor cell and clamp regions in a well region202411,961,904Semiconductor device including trench gate structure and buried shielding region and method of manufacturing202411,881,512Method of manufacturing semiconductor device with silicon carbide body202411,876,133Silicon carbide device with transistor cell and clamp region202411,869,840Silicon carbide device and method for forming a silicon carbide device202411,855,147Method for producing a silicon carbide semiconductor component202311,848,379MOSFET having a drift region with a graded doping profile and methods of manufacturing thereof202311,742,391Semiconductor component having a diode structure in a SiC semiconductor body202311,735,633Silicon carbide device with trench gate structure and method of manufacturing202311,682,703Method of producing a semiconductor device having spicular-shaped field plate structures and a current spread region202311,670,684Semiconductor transistor device and method of manufacturing the same202311,626,477Silicon carbide field-effect transistor including shielding areas202311,600,723Transistor device and method of fabricating a gate of a transistor device202311,462,620Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structures202211,462,611SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof202211,417,747Transistor device with a varying gate runner resistivity per area202211,367,683Silicon carbide device and method for forming a silicon carbide device202211,342,433Silicon carbide devices, semiconductor devices and methods for forming silicon carbide devices and semiconductor devices202211,296,218Semiconductor device202211,211,468Silicon carbide device with trench gate structure and method of manufacturing202111,195,921Semiconductor device with silicon carbide body202111,158,735Charge compensation MOSFET with graded epi profile and methods of manufacturing thereof202111,145,755Silicon carbide semiconductor component with edge termination structure2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to INFINEON TECHNOLOGIES AG (22)· patent assignee history
2021–2023Patents assigned to INFINEON TECHNOLOGIES AUSTRIA AG (7)· patent assignee history
2021–2025Based in AT· patent location history
2022Patents assigned to INFINEON TECHNOLOGIES AMERICAS CORP (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 22 | 2021–2025 |
| INFINEON TECHNOLOGIES AUSTRIA AG | 7 | 2021–2023 |
| INFINEON TECHNOLOGIES AMERICAS CORP | 1 | 2022 |
Locations
| Location | Patents | Span |
|---|---|---|
| AT | 29 | 2021–2025 |