Inventor
DAVID KAMMERLANDER
Inventor
AT
Overview
Patents· 8 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices44%
H01LSemiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
B82YSpecific uses or applications of nanostructures6%
PatentTitleYear
12,550,387Trench junction field effect transistor having a mesa region202612,471,302Silicon carbide device with trench gate structure202512,349,401Semiconductor device including a trench structure having a trench dielectric structure with a gap202512,295,156Semiconductor device including trench gate structure and buried shielding region and method of manufacturing202512,057,473Silicon carbide device with transistor cell and clamp regions in a well region202411,961,904Semiconductor device including trench gate structure and buried shielding region and method of manufacturing202411,876,133Silicon carbide device with transistor cell and clamp region202411,211,468Silicon carbide device with trench gate structure and method of manufacturing2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to INFINEON TECHNOLOGIES AG (6)· patent assignee history
2021–2026Based in AT· patent location history
2025–2026Patents assigned to INFINEON TECHNOLOGIES AUSTRIA AG (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 6 | 2021–2025 |
| INFINEON TECHNOLOGIES AUSTRIA AG | 2 | 2025–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| AT | 8 | 2021–2026 |