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Inventor

Tatsuya Teshima

Inventor
Sagamihara, JP

Overview

6→
Patents
2000–2006
Patent span
Electricity
Primary field (CPC H)

Patents· 6 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices40%
H10BElectronic memory devices33%
B82YSpecific uses or applications of nanostructures20%
H03KPulse technique7%
PatentTitleYear
7,132,713'Controllable conduction device with electrostatic barrier'20066,329,238'Method of fabricating a memory device having a long data retention time with the increase in leakage current suppressed'20016,211,531'Controllable conduction device'20016,157,055'Semiconductor memory device having a long data retention time with the increase in leakage current suppressed'20006,097,036'Semiconductor logic element and apparatus using thereof'20006,060,723'Controllable conduction device'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2006Patents assigned to HITACHI LTD (5)· patent assignee history
2000Patents assigned to HITACHI LLP (1)· patent assignee history
2000–2001Based in Sagamihara, JP· patent location history
2000–2006Based in Kanagawa, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI LTD52000–2006
HITACHI LLP12000
Locations
LocationPatentsSpan
Sagamihara, JP42000–2001
Kanagawa, JP22000–2006