Inventor
Hung H. Tran
Inventor
Chicago, IL, US
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices17%
H10DInorganic electric semiconductor devices15%
H03HImpedance networks, e.g. resonant circuits10%
H03FAmplifiers7%
H04BTransmission7%
H04LTransmission of digital information, e.g. telegraphic communication7%
G06FElectric digital data processing5%
H03KPulse technique5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
B82YSpecific uses or applications of nanostructures3%
PatentTitleYear
11,039,511Defrosting apparatus with two-factor mass estimation and methods of operation thereof202110,658,973Reconfigurable allocation of VNCAP inter-layer vias for co-tuning of L and C in LC tank202010,291,217Fine delay structure with programmable delay ranges201910,236,344Tunnel transistors with abrupt junctions201910,103,226Method of fabricating tunnel transistors with abrupt junctions201810,038,468Peaking inductor array for peaking control unit of transceiver20189,954,487Tuning LC tank circuits20189,748,927'Peaking inductor array for peaking control unit of transceiver'20179,712,144'Fine delay structure with programmable delay ranges'20179,628,059'Fine delay structure with programmable delay ranges'20179,577,607'Peaking inductor array for peaking control unit of transceiver'20179,559,162'Thermoresistance sensor structure for integrated circuits and method of making'20179,509,281'Peaking inductor array for peaking control unit of transceiver'20169,337,088'MOL resistor with metal grid heat shield'20169,087,717'Tunnel field-effect transistors with a gate-swing broken-gap heterostructure'20159,058,460'Thermally-optimized metal fill for stacked chip systems'20158,975,123'Tunnel field-effect transistors with a gate-swing broken-gap heterostructure'20158,871,576'Silicon nanotube MOSFET'20148,866,266'Silicon nanotube MOSFET'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2020Patents assigned to IBM (17)· patent assignee history
2014–2018Patents assigned to TRAN HUNG H (2)· patent assignee history
2014Patents assigned to CHIDAMBARRAO DURESETI (1)· patent assignee history
2014–2017Based in Hopewell Junction, NY, US· patent location history
2016–2018Based in Poughkeepsie, NY, US· patent location history
2017Patents assigned to GLOBALFOUNDRIES INC (1)· patent assignee history
2017–2020Based in Chicago, IL, US· patent location history
2018Patents assigned to ALPTEKIN EMRE (1)· patent assignee history
2018Based in Hopewell Jct., NY, US· patent location history
2021Based in Chandler, AZ, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 17 | 2014–2020 |
| TRAN HUNG Hself | 2 | 2014–2018 |
| ALPTEKIN EMRE | 1 | 2018 |
| CHIDAMBARRAO DURESETI | 1 | 2014 |
| GLOBALFOUNDRIES INC | 1 | 2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Chicago, Illinois, US | 6 | 2017–2020 |
| Hopewell Junction, New York, US | 6 | 2014–2017 |
| Poughkeepsie, New York, US | 4 | 2016–2018 |
| Chandler, AZ, US | 1 | 2021 |
| Hopewell Jct., New York, US | 1 | 2018 |