Inventor
Goshi Biwa
Inventor
Kanagawa, JP
Overview
Patents· 67 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H01LSemiconductor devices7%
C30BSingle-crystal growth6%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light3%
G09GArrangements or circuits for control of indicating devices using static means to present variable information3%
H04NPictorial communication, e.g. television3%
H05BElectric heating2%
LOC132%
PatentTitleYear
11,081,028Light-emitting device assembly, method of producing the same, and display apparatus202111,024,783Light emitting device and display apparatus202110,937,929Semiconductor unit, semiconductor device, light-emitting apparatus, display apparatus, and method of manufacturing semiconductor device202110,840,226Light-emitting apparatus202010,823,337Light emitting apparatus, light emitting unit, display apparatus, electronic device and light emitting element202010,657,868Display apparatus and correction method202010,231,294Display device and light-emitting element201910,168,004Light emitting apparatus, light emitting unit, display apparatus, electronic device and light emitting element201910,050,177GaN based semiconductor light-emitting device and method for producing same20189,967,926Display device and light-emitting element20189,846,303Display system having display device and sensor on substrate20179,693,401'Display device and light-emitting element'20178,993,992'GaN based semiconductor light-emitting device and method for producing same'20158,946,764'Gallium nitride-based semiconductor element, optical device using the same, and image display apparatus using optical device'20158,741,451'Crystal film, crystal substrate, and semiconductor device'20148,686,447'Light emitting unit and display device'20148,168,986'GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of driving GaN-based semiconductor light-emitting element, and image display apparatus'20128,168,966'GaN-based semiconductor light-emitting device, light illuminator, image display planar light source device, and liquid crystal display assembly'20127,956,380'Semiconductor light-emitting device'20117,948,454'Method for driving light-emitting diode, light-emitting diode, method for driving display, display, method for driving electronic device, electronic device, method for driving optical communication apparatus, and optical communication apparatus'20117,928,452'GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of manufacturing GaN-based semiconductor light-emitting element, method of driving GaN-based semiconductor light-emitting element, and image display apparatus'20117,727,331'Crystal firm, crystal substrate, and semiconductor device'20107,700,959'Semiconductor light-emitting device, semiconductor light-emitting apparatus, and method of manufacturing semiconductor light-emitting device'20107,695,991'Method for manufacturing GaN semiconductor light-emitting element'20107,589,346'GaN based semiconductor light-emitting device and method for producing same'20097,564,064'Semiconductor light emitting device, an integrated semiconductor light emitting apparatus, an image display apparatus, and an illuminating apparatus having a semiconductor layer with conical crystal portion'20097,553,370'Crystal growth method for nitride semiconductor and formation method for semiconductor device'20097,501,663'Semiconductor light-emitting device, and image display device and lighting unit comprising same'20097,468,528'Semiconductor light-emitting device'20087,364,805'Crystal film, crystal substrate, and semiconductor device'20087,250,320'Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof'20077,227,189'Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device'20077,221,001'Semiconductor light-emitting device and process for producing the same'20077,205,168'Semiconductor light emitting device, its manufacturing method, integrated semiconductor light emitting apparatus, its manufacturing method, illuminating apparatus, and its manufacturing method'20077,135,348'Semiconductor light emitting device and fabrication method thereof'20067,129,514'Image display unit'20067,129,515'Lighting system'20067,129,107'Process for producing a semiconductor light-emitting device'20067,122,825'Lighting system'20067,122,394'Process for producing a semiconductor light-emitting device'20067,122,826'Image display unit'20067,087,932'Semiconductor light-emitting device and semiconductor light-emitting device'20067,067,339'Selective growth method, and semiconductor light emitting device and fabrication method thereof'20067,033,436'Crystal growth method for nitride semiconductor and formation method for semiconductor device'20067,030,421'Semiconductor light emitting device and fabrication method thereof'20067,002,183'Semiconductor light emitting device having a semiconductor layer formed by selective growth'20067,002,182'Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit'20066,998,645'Semiconductor light emitting device having a semiconductor layer formed by selective growth'20066,969,670'Selective growth method, and semiconductor light emitting device and fabrication method thereof'20056,967,353'Semiconductor light emitting device and fabrication method thereof'20056,946,686'Method of fabricating semiconductor device and semiconductor device'20056,927,164'Method of fabricating semiconductor device and semiconductor device'20056,924,500'Semiconductor light-emitting device and process for producing the same'2005D0505923'Semiconductor element'2005D0505924'Semiconductor element'20056,881,982'Semiconductor light emitting device'20056,870,190'Display unit and semiconductor light emitting device'20056,858,081'Selective growth method, and semiconductor light emitting device and fabrication method thereof'20056,831,300'Semiconductor light emitting device, manufacturing method of a semiconductor light emitting device and connection structure of an electrode layer'20046,828,591'Semiconductor light emitting device and fabrication method thereof'20046,818,463'Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device'20046,818,465'Nitride semiconductor element and production method for nitride semiconductor element'20046,734,030'Semiconductor light emitting device and method of fabricating semiconductor light emitting device'20046,623,560'Crystal growth method'20036,576,571'Process of vapor phase growth of nitride semiconductor'2003D0472531'Semiconductor element'2003D0472529'Semiconductor element'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2021Patents assigned to SONY CORP (63)· patent assignee history
2003–2021Based in Kanagawa, JP· patent location history
2003–2005Based in Tokyo, JP· patent location history
2012–2015Patents assigned to BIWA GOSHI (6)· patent assignee history
2012–2015Patents assigned to OKUYAMA HIROYUKI (4)· patent assignee history
2012–2015Patents assigned to NISHINAKA IPPEI (2)· patent assignee history
2017–2021Patents assigned to SONY SEMICONDUCTOR SOLUTIONS CORP (8)· patent assignee history
2021Based in Yokohama-shi, Kanagawa, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SONY CORP | 63 | 2003–2021 |
| SONY SEMICONDUCTOR SOLUTIONS CORP | 8 | 2017–2021 |
| BIWA GOSHIself | 6 | 2012–2015 |
| OKUYAMA HIROYUKI | 4 | 2012–2015 |
| NISHINAKA IPPEI | 2 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 62 | 2003–2021 |
| Tokyo, JP | 4 | 2003–2005 |
| Yokohama-shi, Kanagawa, JP | 1 | 2021 |