Inventor

Woo-chul Jeon

Inventor
Daegu, KR

Overview

36→
Patents
2012–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 36 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices42%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
H01LSemiconductor devices23%
H03KPulse technique4%
B65GTransport or storage devices, e.g. conveyors for loading or tipping, shop conveyor systems or pneumatic tube conveyors1%
B66CCranes1%
B82YSpecific uses or applications of nanostructures1%
G01NInvestigating or analysing materials by determining their chemical or physical properties1%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h101%
PatentTitleYear
9,570,597'High electron mobility transistor'20179,461,637'Method and apparatus for controlling a gate voltage in high electron mobility transistor'20169,379,102'Nitride-based semiconductor device'20169,306,544'Electronic device including transistor and method of operating the same'20169,252,255'High electron mobility transistor and method of manufacturing the same'20169,245,738'High electron mobility transistor and method of manufacturing the same'20169,231,057'Power switching device and method of manufacturing the same'20169,231,093'High electron mobility transistor and method of manufacturing the same'20169,214,517'Semiconductor device using 2-dimensional electron gas and 2-dimensional hole gas and method of manufacturing the semiconductor device'20159,209,250'High electron mobility transistors, methods of manufacturing the same, and electronic devices including the same'20159,147,738'High electron mobility transistor including plurality of gate electrodes'20159,087,704'Semiconductor devices and methods of manufacturing the semiconductor device'20159,082,693'Nitride semiconductor based power converting device'20159,053,964'Semiconductor devices including a first and second HFET and methods of manufacturing the same'20158,939,696'Automatic carrier transfer for transferring a substrate carrier in a semiconductor manufacturing post-process and method of transferring the substrate carrier using the same'20158,933,446'High electron mobility transistors and methods of manufacturing the same'20158,907,377'High electron mobility transistor and method of manufacturing the same'20148,896,026'Semicondutor device'20148,890,212'Normally-off high electron mobility transistor'20148,883,599'2DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the same'20148,860,089'High electron mobility transistor and method of manufacturing the same'20148,860,087'Nitride semiconductor device and manufacturing method thereof'20148,841,704'Nitride based semiconductor device and manufacturing method thereof'20148,772,834'High electron mobility transistor and method of driving the same'20148,735,940'Semiconductor device and method for manufacturing the same'20148,716,754'Nitride semiconductor device'20148,637,902'Semiconductor device and method of manufacturing the same'20148,525,231'Semiconductor device and method of manufacturing the same'20138,525,227'Semiconductor device and method of manufacturing the same'20138,501,557'Method of manufacturing nitride semiconductor device'20138,426,939'Semiconductor device and method for manufacturing of the same'20138,384,130'Nitride semiconductor device having a two-dimensional electron gas (2DEG) channel'20138,373,245'2DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the same'20138,373,200'Nitride based semiconductor device and method for manufacturing of the same'20138,319,309'Semiconductor device and method for manufacturing of the same'20128,319,308'Semiconductor device and method for manufacturing of the same'2012

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2012–2014Patents assigned to SAMSUNG ELECTRO MECH (16)· patent assignee history
2012–2014Patents assigned to JEON WOO CHUL (14)· patent assignee history
2012–2014Patents assigned to PARK KI YEOL (14)· patent assignee history
2012–2014Patents assigned to PARK YOUNG HWAN (14)· patent assignee history
2012–2014Based in Suwon-si, KR· patent location history
2012Based in Yongin-si, KR· patent location history
2013–2014Based in Gyeonggi-do, KR· patent location history
2014–2017Patents assigned to SAMSUNG ELECTRONICS CO LTD (20)· patent assignee history
2014–2017Based in Daegu, KR· patent location history
2015Based in Gwangju, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD202014–2017
SAMSUNG ELECTRO MECH162012–2014
JEON WOO CHULself142012–2014
PARK KI YEOL142012–2014
PARK YOUNG HWAN142012–2014
Locations
LocationPatentsSpan
Daegu, KR192014–2017
Suwon-si, KR102012–2014
Gyeonggi-do, KR52013–2014
Gwangju, KR12015
Yongin-si, KR12012