Inventor
Michael N. Grimbergen
Inventor
Redwood City, CA, US
Overview
Patents· 39 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices13%
H01LSemiconductor devices9%
C23CCoating metallic material4%
C23FNon-mechanical removal of metallic material from surface3%
G01BMeasuring length, thickness or similar linear dimensions3%
H10BElectronic memory devices2%
H10DInorganic electric semiconductor devices2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
PatentTitleYear
11,022,877Etch processing system having reflective endpoint detection202110,595,365Chamber lid heater ring assembly202010,453,696Dual endpoint detection for advanced phase shift and binary photomasks201910,170,280Plasma reactor having an array of plural individually controlled gas injectors arranged along a circular side wall20199,805,939'Dual endpoint detection for advanced phase shift and binary photomasks'20179,378,930'Inductively coupled plasma reactor having RF phase control and methods of use thereof'20169,218,944'Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors'20159,142,467'Etch rate detection for anti-reflective coating layer and absorber layer etching'20158,961,804'Etch rate detection for photomask etching'20158,956,809'Apparatus and methods for etching quartz substrate in photomask manufacturing applications'20158,900,469'Etch rate detection for anti-reflective coating layer and absorber layer etching'20148,808,559'Etch rate detection for reflective multi-material layers etching'20148,778,204'Methods for reducing photoresist interference when monitoring a target layer in a plasma process'20148,158,526'Endpoint detection for photomask etching'20128,092,695'Endpoint detection for photomask etching'20128,017,029'Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside'20118,012,366'Process for etching a transparent workpiece including backside endpoint detection steps'20118,002,946'Mask etch plasma reactor with cathode providing a uniform distribution of etch rate'20117,976,671'Mask etch plasma reactor with variable process gas distribution'20117,967,930'Plasma reactor for processing a workpiece and having a tunable cathode'20117,829,243'Method for plasma etching a chromium layer suitable for photomask fabrication'20107,635,546'Phase shifting photomask and a method of fabricating thereof'20097,632,419'Apparatus and method for monitoring processing of a substrate'20097,520,999'Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another'20097,504,041'Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator'20097,431,797'Plasma reactor with a dynamically adjustable plasma source power applicator'20087,419,551'Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another'20086,835,275'Reducing deposition of process residues on a surface in a chamber'20046,824,813'Substrate monitoring method and apparatus'20046,712,927'Chamber having process monitoring window'20046,632,321'Method and apparatus for monitoring and controlling wafer fabrication process'20036,534,756'Ultra-stable, compact, high intensity fiber-coupled light source for use in monitoring and process control'20036,406,924'Endpoint detection in the fabrication of electronic devices'20026,390,019'Chamber having improved process monitoring window'20026,352,049'Plasma assisted processing chamber with separate control of species density'20026,284,665'Method for controlling the shape of the etch front in the etching of polysilicon'20016,129,807'Apparatus for monitoring processing of a substrate'20006,081,334'Endpoint detection for semiconductor processes'20006,074,954'Process for control of the shape of the etch front in the etching of polysilicon'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2021Patents assigned to APPLIED MATERIALS INC (38)· patent assignee history
2000–2021Based in Redwood City, CA, US· patent location history
2012–2015Patents assigned to GRIMBERGEN MICHAEL (5)· patent assignee history
2014–2020Patents assigned to GRIMBERGEN MICHAEL N (5)· patent assignee history
2015Patents assigned to CHANDRACHOOD MADHAVI R (1)· patent assignee history
2015Patents assigned to IBRAHIM IBRAHIM M (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 38 | 2000–2021 |
| GRIMBERGEN MICHAELself | 5 | 2012–2015 |
| GRIMBERGEN MICHAEL Nself | 5 | 2014–2020 |
| CHANDRACHOOD MADHAVI R | 1 | 2015 |
| IBRAHIM IBRAHIM M | 1 | 2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Redwood City, California, US | 39 | 2000–2021 |