Inventor

Hideto Hidaka

Inventor

Hyogo, JP

Overview

1987–2021

Patent span

Physics

Primary field (CPC G)

Patents· 302 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary

G11CStatic stores63%

H10DInorganic electric semiconductor devices9%

H10BElectronic memory devices8%

H03KPulse technique7%

B82YSpecific uses or applications of nanostructures2%

G06FElectric digital data processing2%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h101%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h101%

B01DSeparation1%

C07CAcyclic or carbocyclic compounds1%

PatentTitleYear

11,020,685Method for producing alcohol2021 10,870,084Water-alcohol separation system and water-alcohol separation method for producing alcohol2020 10,836,694Method for producing high concentration alcohol2020 9,388,994'Dehumidification and humidification apparatus for vehicles'2016 8,769,978'Dehumidification/humidification device for vehicle'2014 8,351,253'Thin film magnetic memory device capable of conducting stable data read and write operations'2013 8,000,133'Thin film magnetic memory device capable of conducting stable data read and write operations'2011 7,978,542'Thin film magnetic memory device writing data with bidirectional current'2011 7,948,795'Thin film magnetic memory device including memory cells having a magnetic tunnel junction'2011 7,928,759'Low power consumption MIS semiconductor device'2011 7,911,871'Semiconductor memory device operational processing device and storage system'2011 7,885,096'Thin film magnetic memory device writing data with bidirectional current'2011 7,864,564'Magnetic random access memory having improved read disturb suppression and thermal disturbance resistance'2011 7,741,869'Low power consumption MIS semiconductor device'2010 7,733,692'Thin film magnetic memory device capable of conducting stable data read and write operations'2010 7,719,885'Thin film magnetic memory device having a highly integrated memory array'2010 7,652,912'Nonvolatile semiconductor memory device performing data writing in a toggle manner'2010 7,646,627'Magnetic random access memory having improved read disturb suppression and thermal disturbance resistance'2010 7,633,827'Semiconductor memory device, operational processing device and storage system'2009 7,616,476'Thin film magnetic memory device suitable for drive by battery'2009 7,567,454'Thin film magnetic memory device capable of conducting stable data read and write operations'2009 7,558,106'Thin film magnetic memory device writing data with bidirectional current'2009 7,521,762'Semiconductor integrated circuit device operating with low power consumption'2009 7,505,305'Thin film magnetic memory device having a highly integrated memory array'2009 7,489,001'Magnetic thin-film memory device for quick and stable reading data'2009 7,486,549'Thin film magnetic memory device having redundant configuration'2009 7,436,717'Semiconductor device having mechanism capable of high-speed operation'2008 7,436,699'Nonvolatile semiconductor memory device'2008 7,423,898'Nonvolatile semiconductor memory device'2008 7,394,717'Semiconductor memory device, operational processing device and storage system'2008 7,394,685'Nonvolatile memory device with write error suppressed in reading data'2008 7,379,366'Thin film magnetic memory device capable of conducting stable data read and write operations'2008 7,376,005'Thin film magnetic memory device including memory cells having a magnetic tunnel junction'2008 7,355,455'Low power consumption MIS semiconductor device'2008 7,315,468'Thin film magnetic memory device for conducting data write operation by application of a magnetic field'2008 7,313,017'Thin film magnetic memory device conducting read operation by a self-reference method'2007 7,313,042'Thin film magnetic memory device having an improved read operation margin'2007 7,295,465'Thin film magnetic memory device reducing a charging time of a data line in a data read operation'2007 7,292,470'Thin film magnetic memory device writing data with bidirectional current'2007 7,292,472'Memory device capable of stable data writing'2007 7,286,431'Memory device capable of performing high speed reading while realizing redundancy replacement'2007 7,272,036'Thin film magnetic memory device suitable for drive by battery'2007 7,256,644'Semiconductor circuit device having hierarchical power supply structure'2007 7,257,020'Thin film magnetic memory device having redundant configuration'2007 7,254,057'Magnetic thin-film memory device for quick and stable reading data'2007 7,254,058'Thin film magnetic memory device provided with program element'2007 7,250,796'Semiconductor device including an output circuit having a reduced output noise'2007 7,242,060'Semiconductor memory device including an SOI substrate'2007 7,233,537'Thin film magnetic memory device provided with a dummy cell for data read reference'2007 7,233,519'Thin film magnetic memory device for conducting data write operation by application of a magnetic field'2007 7,206,222'Thin-film magnetic memory device executing data writing with data write magnetic fields in two directions'2007 7,154,777'Memory device capable of stable data writing'2006 7,154,776'Thin film magnetic memory device writing data with bidirectional current'2006 7,138,684'Semiconductor memory device including an SOI substrate'2006 7,133,310'Thin film magnetic memory device having a highly integrated memory array'2006 7,126,845'Memory device capable of performing high speed reading while realizing redundancy replacement'2006 7,116,595'Thin film magnetic memory device having a magnetic tunnel junction'2006 7,110,288'Thin film magnetic memory device having redundant configuration'2006 7,102,922'Thin film magnetic memory device capable of conducting stable data read and write operations'2006 7,085,174'Semiconductor memory device with current driver providing bi-directional current to data write line'2006 7,068,067'Semiconductor circuit device having active and standby states'2006 7,061,796'Thin film magnetic memory device for programming required information with an element similar to a memory cell information programming method'2006 7,057,925'Thin film magnetic memory device conducting read operation by a self-reference method'2006 7,042,245'Low power consumption MIS semiconductor device'2006 7,042,761'Thin film magnetic memory device suppressing internal magnetic noises'2006 7,020,008'Thin film magnetic memory device writing data with bidirectional current'2006 7,006,391'Semiconductor memory device allowing increase in capacity and operation speed with a suppressed layout area'2006 7,006,373'Thin film magnetic memory device with memory cells including a tunnel magnetic resistive element'2006 6,996,002'Thin film magnetic memory device provided with magnetic tunnel junctions'2006 6,990,024'Thin film magnetic memory device having data read current tuning function'2006 6,987,690'Thin film magnetic memory device for programming required information with an element similar to a memory cell and information programming method'2006 6,975,534'Thin film magnetic memory device having a highly integrated memory array'2005 6,975,147'Data output circuit with reduced output noise'2005 6,972,991'Thin film magnetic memory device suppressing internal magnetic noises'2005 6,970,377'Thin film magnetic memory device for conducting data write operation by application of a magnetic field'2005 6,970,378'Thin-film magnetic memory device executing data writing with data write magnetic fields in two directions'2005 6,967,862'Semiconductor memory device with magnetic disturbance reduced'2005 6,954,374'Thin film magnetic memory device including memory cells having a magnetic tunnel junction'2005 6,947,320'Memory device capable of stable data writing'2005 6,922,355'Thin film magnetic memory device capable of conducting stable data read and write operations'2005 6,912,174'Thin film magnetic memory device suppressing influence of magnetic field noise from power supply wiring'2005 6,911,703'Semiconductor integrated circuit device operating with low power consumption'2005 6,903,963'Thin-film magnetic memory device executing data writing with data write magnetic fields in two directions'2005 6,898,114'Memory device capable of stable data writing'2005 6,894,922'Memory device capable of performing high speed reading while realizing redundancy replacement'2005 6,888,772'Non-volatile memory device achieving fast data reading by reducing data line charging period'2005 6,885,235'Semiconductor integrated circuit device with internal power supply potential generation circuit'2005 6,885,216'Semiconductor circuit device having active and standby states'2005 6,876,575'Thin film magnetic memory device having a magnetic tunnel junction'2005 6,876,576'Thin film magnetic memory device having redundant configuration'2005 6,870,757'Thin film magnetic memory device applying a magnetic field to write data'2005 6,868,004'Thin film magnetic memory device suppressing resistance of transistors present in current path'2005 6,868,029'Semiconductor device with reduced current consumption in standby state'2005 6,868,005'Thin film magnetic memory device provided with magnetic tunnel junctions'2005 6,865,103'Thin film magnetic memory device having a redundant structure'2005 6,862,209'Thin film magnetic memory device with magnetic tunnel junction'2005 6,859,403'Semiconductor memory device capable of overcoming refresh disturb'2005 6,856,538'Thin film magnetic memory device suppressing internal magnetic noises'2005 6,856,565'Thin film magnetic memory device conducting read operation by a self-reference method'2005 6,856,539'Thin film magnetic memory device including memory cells having a magnetic tunnel junction'2005 6,845,477'Semiconductor test device for conducting an operation test in parallel on many chips in a wafer test and semiconductor test method'2005 6,842,367'Thin film magnetic memory device provided with program element'2005 6,842,366'Thin film magnetic memory device executing self-reference type data read'2005 6,831,867'Semiconductor device having mechanism capable of high-speed operation'2004 6,816,418'MIS semiconductor device having improved gate insulating film reliability'2004 6,813,199'Semiconductor memory device with improved saving rate for defective chips'2004 6,795,335'Thin film magnetic memory device for conducting data write operation by application of a magnetic field'2004 6,791,875'Thin film magnetic memory device realizing both high-speed data reading operation and stable operation'2004 6,791,876'Thin-film magnetic memory device suppressing parasitic capacitance applied to data line or the like'2004 6,788,568'Thin film magnetic memory device capable of conducting stable data read and write operations'2004 6,787,853'Semiconductor device using an SOI substrate'2004 6,788,569'Thin film magnetic memory device reducing a charging time of a data line in a data read operation'2004 6,781,874'Thin film magnetic memory device including memory cells having a magnetic tunnel junction'2004 6,777,986'Data output circuit with reduced output noise'2004 6,778,430'Magnetic thin-film memory device for quick and stable reading data'2004 6,768,662'Semiconductor memory device including an SOI substrate'2004 6,762,953'Nonvolatile memory device with sense amplifier securing reading margin'2004 6,760,251'Memory device reading data according to difference in electrical resistance between selected memory cell and reference cell'2004 6,757,191'Thin film magnetic memory device sharing an access element by a plurality of memory cells'2004 6,754,099'Thin film magnetic memory device including memory cells having a magnetic tunnel junction'2004 6,738,285'Thin film magnetic memory device with high-accuracy data read structure having a reduced number of circuit elements'2004 6,690,241'Ring oscillator having variable capacitance circuits for frequency adjustment'2004 6,683,807'Thin film magnetic memory device for programming required information with an element similar to a memory cell and information programming method'2004 6,680,862'Memory device having wide margin of data reading operation, for storing data by change in electric resistance value'2004 6,678,195'Semiconductor memory device with improved flexible redundancy scheme'2004 6,646,911'Thin film magnetic memory device having data read current tuning function'2003 6,635,934'Semiconductor integrated circuit device operating with low power consumption'2003 6,628,554'MIS semiconductor device having improved gate insulating film reliability'2003 6,621,306'Random logic circuit'2003 6,614,681'Thin film magnetic memory device with memory cells including a tunnel magnetic resistive element'2003 6,611,470'Semiconductor memory device having refresh size setting circuit'2003 6,611,454'Thin film magnetic memory device writing data of a plurality of bits in parallel'2003 6,608,776'Thin film magnetic memory device having a highly integrated memory array'2003 RE038213'Data output circuit with reduced output noise'2003 6,603,217'Semiconductor circuit device having hierarchical power supply structure'2003 6,603,685'Semiconductor integrated circuit device capable of ensuring reliability of transistor driving high voltage'2003 6,597,617'Semiconductor device with reduced current consumption in standby state'2003 6,587,371'Memory device having wide margin of data reading operation, for storing data by change in electric resistance value'2003 6,586,803'Semiconductor device using an SOI substrate'2003 6,584,005'Semiconductor memory device preventing erroneous writing in write operation and delay in read operation'2003 6,577,522'Semiconductor memory device including an SOI substrate'2003 6,563,748'Semiconductor device having mechanism capable of high-speed operation'2003 6,545,931'Semiconductor memory device with improved flexible redundancy scheme'2003 6,545,926'Antifuse address detecting circuit programmable by applying a high voltage and semiconductor integrated circuit device provided with the same'2003 6,542,428'Semiconductor memory device allowing increase in capacity and operation speed with a suppressed layout area'2003 6,542,402'Thin film magnetic memory device capable of easily controlling a data write current'2003 6,538,953'Semiconductor memory device'2003 6,529,404'Thin film magnetic memory device capable of reducing number of wires and reading data at high speed'2003 6,501,679'Thin film magnetic device including memory cells having a magnetic tunnel junction'2002 6,487,136'Semiconductor memory device with reduced current consumption in data hold mode'2002 6,480,431'Semiconductor having mechanism capable of operating at high speed'2002 6,480,437'Semiconductor memory device permitting improved integration density and reduced accessing time'2002 6,469,923'Semiconductor device with programming capacitance element'2002 6,469,327'Semiconductor device with efficiently arranged pads'2002 6,466,509'Semiconductor memory device having a column select line transmitting a column select signal'2002 6,459,301'Semiconductor circuit device having active and standby states'2002 6,449,199'Semiconductor memory device with improved flexible redundancy scheme'2002 6,445,222'Data output circuit with reduced output noise'2002 6,426,908'Semiconductor memory device with reduced current consumption in data hold mode'2002 6,424,582'Semiconductor memory device having redundancy'2002 6,421,294'Semiconductor memory device having large data I/O width and capable of speeding up data input/output and reducing power consumption'2002 6,421,286'Semiconductor integrated circuit device capable of self-analyzing redundancy replacement adapting to capacities of plural memory circuits integrated therein'2002 6,418,066'Semiconductor memory device having multibit data bus and redundant circuit configuration with reduced chip area'2002 6,414,883'Semiconductor memory device'2002 6,414,894'Semiconductor device with reduced current consumption in standby state'2002 6,411,560'Semiconductor memory device capable of reducing leakage current flowing into substrate'2002 6,407,958'Semiconductor integrated circuit device with split hierarchical power supply structure'2002 6,404,661'Semiconductor storage device having arrangement for controlling activation of sense amplifiers'2002 6,400,621'Semiconductor memory device and method of checking same for defect'2002 6,400,632'Semiconductor device including a fuse circuit in which the electric current is cut off after blowing so as to prevent voltage fall'2002 6,385,159'Semiconductor memory device including an SOI substrate'2002 6,384,445'Semiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regions'2002 6,384,674'Semiconductor device having hierarchical power supply line structure improved in operating speed'2002 6,366,515'Semiconductor memory device'2002 6,359,805'Thin film magnetic memory device capable of easily controlling a data write current'2002 6,349,054'Thin film magnetic memory device including memory cells having a magnetic tunnel junction'2002 6,337,583'Random logic circuit'2002 6,333,884'Semiconductor memory device permitting improved integration density and reduced accessing time'2001 6,313,695'Semiconductor circuit device having hierarchical power supply structure'2001 6,310,803'Semiconductor having mechanism capable of operating at high speed'2001 6,310,807'Semiconductor integrated circuit device including tester circuit for defective memory cell replacement'2001 6,301,163'Semiconductor memory device and method of checking same for defect'2001 6,292,413'Semiconductor device, semiconductor memory device and semiconductor integrated circuit device'2001 6,288,949'Semiconductor memory device including an SOI substrate'2001 6,272,055'Semiconductor memory device'2001 6,233,181'Semiconductor memory device with improved flexible redundancy scheme'2001 6,215,141'Semiconductor device including a transistor having portions of source and drain regions removed by the same amount'2001 6,197,643'Method for making level converting circuit, internal potential generating circuit and internal potential generating unit'2001 6,172,918'Semiconductor memory device allowing high-speed operation of internal data buses'2001 6,166,972'Semiconductor memory device and defect repair method for semiconductor memory device'2000 6,163,180'Data output circuit with reduced output noise'2000 6,147,544'Data transfer circuit transferring complementary data signals'2000 6,144,577'Semiconductor memory device having multibit data bus and redundant circuit configuration with reduced chip area'2000 6,115,283'Semiconductor device with programming capacitance element'2000 RE036842'Semiconductor memory device for maintaining level of signal line'2000 6,104,630'Semiconductor storage device having spare and dummy word lines'2000 6,100,550'Circuit cell based semiconductor integrated circuit device and method of arrangement-interconnection therefor'2000 6,091,268'Potential detecting circuit and semiconductor integrated circuit'2000 6,091,647'Semiconductor memory device including an SOI substrate'2000 6,060,738'Semiconductor device having SOI structure'2000 6,055,206'Synchronous semiconductor memory device capable of reducing power dissipation by suppressing leakage current during stand-by and in active operation'2000 6,054,885'Semiconductor device and testing apparatus thereof'2000 6,018,172'Semiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regions'2000 6,011,735'Synchronous semiconductor memory device with redundancy determination unit that can set replacement of redundant memory array provided in row and column directions'2000 5,999,464'Semiconductor memory device and method of checking same for defect'1999 5,982,005'Semiconductor device using an SOI substrate'1999 5,972,756'Method of fabricating semiconductor device with a fuse portion'1999 5,973,983'Semiconductor memory device having a hierarchical bit line structure with reduced interference noise'1999 5,970,507'Semiconductor memory device having a refresh-cycle program circuit'1999 5,969,984'Level converting circuit for converting level of an input signal, internal potential generating circuit for generating internal potential, internal potential generating unit generating internal potential, highly reliable semiconductor device'1999 5,953,261'Semiconductor memory device having data input/output circuit of small occupied area capable of high-speed data input/output'1999 5,943,273'Semiconductor memory device'1999 5,936,443'Power-on reset signal generator for semiconductor device'1999 5,933,377'Semiconductor memory device and defect repair method for semiconductor memory device'1999 5,933,048'Data output circuit with reduced output noise'1999 5,898,316'Mode setting circuit of semiconductor device'1999 5,893,728'Semiconductor device having a floating node that can maintain a predetermined potential for long time, a semiconductor memory device having high data maintenance performance, and a method of manufacturing thereof'1999 5,880,493'Semiconductor integrated circuit devices adapted for automatic design and method of arranging such devices'1999 RE036089'Column selecting circuit in semiconductor memory device'1999 5,867,440'Semiconductor storage device with improved layout of power supply lines'1999 5,867,418'Semiconductor memory device and semiconductor device'1999 5,867,439'Semiconductor memory device having internal address converting function, whose test and layout are conducted easily'1999 RE036027'Random access memory of a CSL system with a bit line pair and an I/O line pair independently set to different precharge voltages'1999 5,847,595'Semiconductor device having controllable internal potential generating circuit'1998 5,847,430'Input protection circuit for semiconductor device'1998 5,844,767'Level converting circuit for converting level of an input signal, internal potential generating circuit for generating internal potential, internal potential generating unit generating internal potential highly reliable semiconductor device and method of'1998 5,828,258'Semiconductor device and testing apparatus thereof'1998 5,825,696'Semiconductor memory device including an SOI substrate'1998 5,815,454'Semiconductor memory device having power line arranged in a meshed shape'1998 5,793,686'Semiconductor memory device having data input/output circuit of small occupied area capable of high-speed data input/output'1998 5,773,865'Semiconductor memory and semiconductor device having SOI structure'1998 5,764,576'Semiconductor memory device and method of checking same for defect'1998 5,760,614'Potential detecting circuit and semiconductor integrated circuit'1998 5,740,119'Semiconductor memory device having internal address converting function, whose test and layout are conducted easily'1998 5,726,940'Semiconductor memory device of which prescribed state of operation is terminated under a prescribed condition and method of operating a semiconductor memory device for terminating prescribed state of operation'1998 5,724,293'Semiconductor memory device having power line arranged in a meshed shape'1998 5,708,610'Semiconductor memory device and semiconductor device'1998 5,701,090'Data output circuit with reduced output noise'1997 5,687,123'Semiconductor memory device'1997 5,668,755'Semiconductor memory device having well region'1997 5,652,730'Semiconductor memory device having hierarchical boosted power-line scheme'1997 5,650,972'Semiconductor memory device having power line arranged in a meshed shape'1997 5,650,975'Semiconductor memory device having improved hierarchical I/O line pair structure'1997 5,635,744'Semiconductor memory and semiconductor device having SOI structure'1997 5,610,871'Semiconductor memory device having a hierarchical bit line structure with reduced interference noise'1997 5,604,707'Semiconductor memory device responsive to hierarchical internal potentials'1997 5,602,793'Semiconductor memory device having power line arranged in a meshed shape'1997 5,592,009'Semiconductor device having a floating node that can maintain a predetermined potential for long time, a semiconductor memory device having high data maintenance performance, and a method of manufacturing thereof'1997 5,574,397'Signal output circuit operating stably and arrangement of power supply interconnection line therefor in semiconductor integrated circuit device'1996 5,566,799'Low aerodynamic noise type current collection equipment'1996 5,550,769'Bit line structure for semiconductor memory device'1996 5,513,142'Semiconductor memory device for maintaining level of signal line'1996 5,512,501'Method of manufacturing a semiconductor device having an SOI structure'1996 5,509,132'Semiconductor memory device having an SRAM as a cache memory integrated on the same chip and operating method thereof'1996 5,461,589'Bit line structure for semiconductor memory device with bank separation at cross-over regions'1995 5,426,615'Semiconductor memory device having power line arranged in a meshed shape'1995 5,416,734'Bit line structure for semiconductor memory device'1995 5,390,140'Signal output circuit operating stably and arrangement of power supply interconnection line therefor in semiconductor integrated circuit device'1995 5,371,714'Method and apparatus for driving word line in block access memory'1994 5,325,336'Semiconductor memory device having power line arranged in a meshed shape'1994 5,321,646'Layout of a semiconductor memory device'1994 5,321,657'Random access memory of a CSL system with a bit line pair and an I/O line pair independently set to different precharge voltages'1994 5,315,548'Column selecting circuit in semiconductor memory device'1994 5,280,443'Bit line structure for semiconductor memory device'1994 RE034463'Semiconductor memory device with active pull up'1993 5,249,155'Semiconductor device incorporating internal voltage down converting circuit'1993 5,226,139'Semiconductor memory device with a built-in cache memory and operating method thereof'1993 5,222,047'Method and apparatus for driving word line in block access memory'1993 5,214,601'Bit line structure for semiconductor memory device including cross-points and multiple interconnect layers'1993 5,179,687'Semiconductor memory device containing a cache and an operation method thereof'1993 5,103,426'Decoding circuit and method for functional block selection'1992 5,079,748'Dynamic random access memory with read-write signal of shortened duration'1992 4,972,380'Decoding circuit for functional block'1990 4,945,517'Dynamic random access memory'1990 4,926,385'Semiconductor memory device with cache memory addressable by block within each column'1990 4,922,459'Dynamic semiconductor memory device'1990 4,922,367'Circuit for preventing latch-up of parasitic thyristor formed in CMOS integrated circuit'1990 4,922,453'Bit line structure of dynamic type semiconductor memory device'1990 4,918,692'Automated error detection for multiple block memory array chip and correction thereof'1990 4,914,630'Refresh arrangement in a block divided memory including a plurality of shift registers'1990 4,903,268'Semiconductor memory device having on-chip error check and correction functions'1990 4,896,297'Circuit for generating a boosted signal for a word line'1990 4,890,261'Variable word length circuit of semiconductor memory'1989 4,843,596'Semiconductor memory device with address transition detection and timing control'1989 4,837,747'Redundary circuit with a spare main decoder responsive to an address of a defective cell in a selected cell block'1989 4,835,743'Semiconductor memory device performing multi-bit Serial operation'1989 4,833,654'Method of and circuitry for generating staggered restore timing signals in block partitioned DRAM'1989 4,833,650'Semiconductor memory device including programmable mode selection circuitry'1989 4,823,322'Dynamic random access memory device having an improved timing arrangement'1989 4,809,230'Semiconductor memory device with active pull up'1989 4,808,844'Semiconductor device'1989 4,774,691'Semiconductor memory device'1988 4,760,559'Semiconductor memory device'1988 4,757,476'Dummy word line driving circuit for a MOS dynamic RAM'1988 4,736,343'Dynamic RAM with active pull-up circuit'1988 4,734,890'Dynamic RAM having full-sized dummy cell'1988 4,730,320'Semiconductor memory device'1988 4,722,074'Semiconductor storage unit with I/O bus precharging and equalization'1988 4,719,597'Driving circuit for a shared sense amplifier with increased speed clock generation circuit for reading addressed memory cells'1988 4,712,123'Dynamic memory device'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987–2005Patents assigned to MITSUBISHI ELECTRIC CORP (173)· patent assignee history

1987–1999Based in Itami, JP· patent location history

1988–2013Based in Hyogo, JP· patent location history

1998–2011Based in Tokyo, JP· patent location history

2001–2010Patents assigned to RENESAS TECH CORP (110)· patent assignee history

2002–2007Patents assigned to MITSUBISHI ELECTRIC ENG (12)· patent assignee history

2011–2013Patents assigned to RENESAS ELECTRONICS CORP (8)· patent assignee history

2013–2016Patents assigned to HIDAKA HIDETO (3)· patent assignee history

2016Based in Yokohama, JP· patent location history

2020–2021Based in Chiyoda-ku, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
MITSUBISHI ELECTRIC CORP	173	1987–2005
RENESAS TECH CORP	110	2001–2010
MITSUBISHI ELECTRIC ENG	12	2002–2007
RENESAS ELECTRONICS CORP	8	2011–2013
HIDAKA HIDETOself	3	2013–2016

Locations

Location	Patents	Span
Hyogo, JP	256	1988–2013
Tokyo, JP	27	1998–2011
Itami, JP	13	1987–1999
Chiyoda-ku, JP	3	2020–2021
Yokohama, JP	1	2016