Inventor
Chih-Pin Tsao
Inventor
Zhubei City, TW
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices31%
H10DInorganic electric semiconductor devices31%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H01JElectric discharge tubes or discharge lamps3%
H10BElectronic memory devices1%
PatentTitleYear
11,107,810Fin field effect transistor (FinFET) device structure and method for forming the same202110,861,975FinFET with rounded source/drain profile202010,797,164FinFETs having epitaxial capping layer on fin and methods for forming the same202010,770,570FinFET device and methods of forming202010,714,586Semiconductor device and a method for fabricating the same202010,497,571Device having work function metal stack and method of forming the same201910,388,792FinFET with rounded source/drain profile201910,276,568Semiconductor device and manufacturing method thereof201910,262,878Fluorine contamination control in semiconductor manufacturing process201910,163,626Metal gate structure and manufacturing method thereof201810,157,844FinFET device having oxide layer among interlayer dielectric layer201810,153,351Semiconductor device and a method for fabricating the same201810,115,808finFET device and methods of forming201810,109,507Fluorine contamination control in semiconductor manufacturing process201810,109,742Semiconductor device including fin structures and manufacturing method thereof20189,947,658Semiconductor device and manufacturing method thereof20189,922,976'Semiconductor device and manufacturing method thereof'20189,831,242Semiconductor device and manufacturing method thereof20179,831,345FinFET with rounded source/drain profile20179,520,502'FinFETs having epitaxial capping layer on fin and methods for forming the same'20169,502,253'Method of manufacturing an integrated circuit'20168,859,380'Integrated circuits and manufacturing methods thereof'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014Patents assigned to CHEN WEN-YUAN (1)· patent assignee history
2014Patents assigned to CHENG CHUN-FU (1)· patent assignee history
2014Patents assigned to CHENG KUAN-LUN (1)· patent assignee history
2014Patents assigned to SHEU YI-MING (1)· patent assignee history
2014–2020Based in Zhubei City, TW· patent location history
2016–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (21)· patent assignee history
2018–2019Based in Hsinchu County, TW· patent location history
2019Based in Hsinchu, TW· patent location history
2021Based in Zhubei, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 21 | 2016–2021 |
| CHEN WEN-YUAN | 1 | 2014 |
| CHENG CHUN-FU | 1 | 2014 |
| CHENG KUAN-LUN | 1 | 2014 |
| SHEU YI-MING | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Zhubei City, TW | 14 | 2014–2020 |
| Hsinchu County, TW | 6 | 2018–2019 |
| Zhubei, TW | 1 | 2021 |
| Hsinchu, TW | 1 | 2019 |