LexDanaLexDanabeta
Inventor

Mikhail Korolik

Inventor
San Jose, CA, US

Overview

66→
Patents
2003–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 66 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
B08BCleaning in general10%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices10%
H01LSemiconductor devices8%
C11DDetergent compositions7%
H01JElectric discharge tubes or discharge lamps7%
C23GCleaning or de-greasing of metallic material by chemical methods other than electrolysis6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
B05DProcesses for applying fluent materials to surfaces, in general4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
PatentTitleYear
10,593,553Germanium etching systems and methods202010,204,796Methods for selective etching of a silicon material using HF gas without nitrogen etchants201910,177,227Method for fabricating junctions and spacers for horizontal gate all around devices201910,043,674Germanium etching systems and methods201810,043,684Self-limiting atomic thermal etching systems and methods20189,875,907Self-aligned shielding of silicon oxide20189,859,128'Self-aligned shielding of silicon oxide'20189,831,097Methods for selective etching of a silicon material using HF gas without nitrogen etchants20179,576,809'Etch suppression with germanium'20179,478,434'Chlorine-based hardmask removal'20169,449,843'Selectively etching metals and metal nitrides conformally'20169,359,673'Apparatus and method for atomic layer deposition'20169,355,862'Fluorine-based hardmask removal'20169,355,863'Non-local plasma oxide etch'20169,275,834'Selective titanium nitride etch'20169,236,265'Silicon germanium processing'20169,111,877'Non-local plasma oxide etch'20158,951,429'Tungsten oxide processing'20158,716,210'Material for cleaning a substrate'20148,691,027'Method for removing material from semiconductor wafer and apparatus for performing the same'20148,671,959'Method and apparatus for cleaning a substrate using non-newtonian fluids'20148,623,456'Methods for atomic layer deposition'20148,608,859'Method for removing contamination from a substrate and for making a cleaning solution'20138,591,662'Methods for cleaning a semiconductor substrate'20138,590,550'Apparatus for cleaning contaminants from substrate'20138,555,903'Method and apparatus for removing contamination from substrate'20138,535,451'Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids'20138,522,799'Apparatus and system for cleaning a substrate'20138,522,801'Method and apparatus for cleaning a semiconductor substrate'20138,480,810'Method and apparatus for particle removal'20138,475,599'Substrate preparation using stabilized fluid solutions and methods for making stable fluid solutions'20138,388,762'Substrate cleaning technique employing multi-phase solution'20138,323,420'Method for removing material from semiconductor wafer and apparatus for performing the same'20128,316,866'Method and apparatus for cleaning a semiconductor substrate'20128,287,647'Apparatus and method for atomic layer deposition'20128,242,067'Two-phase substrate cleaning material'20128,236,382'Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same'20128,137,474'Cleaning compound and method and system for using the cleaning compound'20128,128,278'Methods and apparatus for thin metal film thickness measurement'20128,043,441'Method and apparatus for cleaning a substrate using non-Newtonian fluids'20118,011,116'Substrate proximity drying using in-situ local heating of substrate'20117,975,708'Proximity head with angled vacuum conduit system, apparatus and method'20117,939,139'Methods for atomic layer deposition (ALD) using a proximity meniscus'20117,897,213'Methods for contained chemical surface treatment'20117,884,017'Thermal methods for cleaning post-CMP wafers'20117,862,662'Method and material for cleaning a substrate'20117,806,126'Substrate proximity drying using in-situ local heating of substrate and substrate carrier point of contact, and methods, apparatus, and systems for implementing the same'20107,799,141'Method and system for using a two-phases substrate cleaning compound'20107,749,689'Methods for providing a confined liquid for immersion lithography'20107,737,097'Method for removing contamination from a substrate and for making a cleaning solution'20107,709,400'Thermal methods for cleaning post-CMP wafers'20107,696,141'Cleaning compound and method and system for using the cleaning compound'20107,648,584'Method and apparatus for removing contamination from substrate'20107,632,376'Method and apparatus for atomic layer deposition (ALD) in a proximity system'20097,614,411'Controls of ambient environment during wafer drying using proximity head'20097,615,486'Apparatus and method for integrated surface treatment and deposition for copper interconnect'20097,591,613'Method and apparatus for transporting a substrate using non-newtonian fluid'20097,581,875'Method and apparatus for thin metal film thickness measurement'20097,568,490'Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids'20097,534,307'Methods for processing wafer surfaces using thin, high velocity fluid layer'20097,416,370'Method and apparatus for transporting a substrate using non-Newtonian fluid'20087,383,843'Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer'20087,367,345'Apparatus and method for providing a confined liquid for immersion lithography'20087,204,639'Method and apparatus for thin metal film thickness measurement'20077,078,344'Stress free etch processing in combination with a dynamic liquid meniscus'20066,534,381'Method for fabricating multi-layered substrates'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2020Based in San Jose, CA, US· patent location history
2006–2016Patents assigned to LAM RES CORP (48)· patent assignee history
2012–2016Patents assigned to KOROLIK MIKHAIL (22)· patent assignee history
2012–2014Patents assigned to RAVKIN MICHAEL (14)· patent assignee history
2012–2014Patents assigned to FREER ERIK M (13)· patent assignee history
2015–2020Patents assigned to APPLIED MATERIALS INC (17)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
LAM RES CORP482006–2016
KOROLIK MIKHAILself222012–2016
APPLIED MATERIALS INC172015–2020
RAVKIN MICHAEL142012–2014
FREER ERIK M132012–2014
Locations
LocationPatentsSpan
San Jose, California, US662003–2020