Inventor
Shinichi Nitta
Inventor
Yokohama, JP
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
H10BElectronic memory devices15%
H10DInorganic electric semiconductor devices15%
G03GElectrography6%
Y10TTechnical subjects covered by former us classification6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
F16KValves4%
F04BPositive-displacement machines for liquids3%
G05DSystems for controlling or regulating non-electric variables3%
PatentTitleYear
9,791,808'Intermediate transfer belt, method for producing the same, and image forming apparatus'20179,223,256'Intermediate transfer belt method for producing intermediate transfer belt, and image forming apparatus'20159,063,475'Intermediate transfer belt and electrophotographic apparatus'20158,888,471'Liquid feed pump and flow control device'20148,807,014'Multi-layer diaphragm'20148,760,717'Intermediate transfer belt and image forming apparatus'20148,521,073'Intermediate transfer member and image forming apparatus using the same'20137,700,381'Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them'20107,510,945'Element formation substrate, method of manufacturing the same, and semiconductor device'20097,439,112'Semiconductor device using partial SOI substrate and manufacturing method thereof'20087,420,249'Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer'20087,285,825'Element formation substrate for forming semiconductor device'20077,148,543'Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions'20067,112,822'Semiconductor device using partial SOI substrate and manufacturing method thereof'20067,060,133'Single crystal pulling apparatus for a metal fluoride'20067,057,259'Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them'20067,019,365'Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer'20067,018,904'Semiconductor chip having multiple functional blocks integrated in a single chip and method for fabricating the same'20066,906,384'Semiconductor device having one of patterned SOI and SON structure'20056,855,976'Semiconductor device using partial SOI substrate and manufacturing method thereof'20056,835,981'Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions'20046,630,714'Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer'20036,202,681'Vacuum pressure control system'20016,041,814'Vacuum pressure control system'20004,665,081'Solid nifedipine preparations and a process for preparing same'1987Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1987–2004Based in Tokyo, JP· patent location history
2000–2014Based in Komaki, JP· patent location history
2003–2009Patents assigned to TOSHIBA KK (13)· patent assignee history
2003–2010Based in Yokohama, JP· patent location history
2006–2015Based in Kanagawa, JP· patent location history
2013–2017Patents assigned to AOTO JUN (5)· patent assignee history
2013–2017Patents assigned to KATOH SAYAKA (5)· patent assignee history
2013–2017Patents assigned to MASHIKO KENICHI (5)· patent assignee history
2013–2017Patents assigned to NITTA SHINICHI (5)· patent assignee history
2013–2017Based in Miyagi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 13 | 2003–2009 |
| AOTO JUN | 5 | 2013–2017 |
| KATOH SAYAKA | 5 | 2013–2017 |
| MASHIKO KENICHI | 5 | 2013–2017 |
| NITTA SHINICHIself | 5 | 2013–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yokohama, JP | 11 | 2003–2010 |
| Miyagi, JP | 4 | 2013–2017 |
| Komaki, JP | 4 | 2000–2014 |
| Kanagawa, JP | 3 | 2006–2015 |
| Tokyo, JP | 2 | 1987–2004 |