Inventor

Michael Nuttall

Inventor

Meridian, ID, US

Overview

1996–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 66 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices20%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%

A61MDevices for introducing media into, or onto, the body9%

G11CStatic stores6%

H10BElectronic memory devices6%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%

G01BMeasuring length, thickness or similar linear dimensions5%

A61HPhysical therapy apparatus, e.g. devices for locating or stimulating reflex points in the body5%

A61JContainers specially adapted for medical or pharmaceutical purposes4%

PatentTitleYear

10,905,834Aerosol delivery system2021 10,413,690Oral mouthpiece and method for the use thereof2019 10,363,194Oral appliance for administration of electrical stimulation and method for the use thereof2019 10,028,885Oral mouthpiece and method for the use thereof2018 9,901,690'Aerosol delivery device'2018 9,693,928'Swallowing air pulse therapy mouthpiece and method for the use thereof'2017 9,339,441'Oral mouthpiece and method for the use thereof'2016 9,032,951'Aerosol delivery device'2015 8,992,468'Oral mouthpiece and method for the use thereof'2015 8,540,660'Swallowing air pulse therapy mouthpiece and method for the use thereof'2013 8,517,729'Oral mouthpiece and method for the use thereof'2013 8,181,591'Domed actuator for indicating device'2012 8,082,873'Drive mechanism for an indicating device'2011 7,989,864'Methods for enhancing capacitors having roughened features to increase charge-storage capacity'2011 7,954,487'Nebulizer apparatus and method'2011 7,923,322'Method of forming a capacitor'2011 7,576,380'Methods for enhancing capacitors having roughened features to increase charge-storage capacity'2009 7,390,305'Peak flow meter'2008 7,270,123'Nebulizer apparatus and method'2007 7,193,273'Method for enhancing vertical growth during the selective formation of silicon, and structures formed using same'2007 7,101,756'Methods for enhancing capacitors having roughened features to increase charge-storage capacity'2006 7,087,490'Method and composite for decreasing charge leakage'2006 7,049,231'Methods of forming capacitors'2006 7,034,353'Methods for enhancing capacitors having roughened features to increase charge-storage capacity'2006 7,008,845'Method and composite for decreasing charge leakage'2006 6,803,280'Method and composite for decreasing charge leakage'2004 6,797,558'Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layer'2004 6,791,148'Method and composite for decreasing charge leakage'2004 6,746,922'Method and composite for decreasing charge leakage'2004 6,682,970'Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer'2004 6,680,229'Method for enhancing vertical growth during the selective formation of silicon, and structures formed using same'2004 6,594,013'Reflectance method for evaluating the surface characteristics of opaque materials'2003 6,541,811'Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer'2003 6,521,945'Method and composite for decreasing charge leakage'2003 6,509,239'Method of fabricating a field effect transistor'2003 6,479,854'Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer'2002 6,458,699'Methods of forming a contact to a substrate'2002 6,452,678'Reflectance method for evaluating the surface characteristics of opaque materials'2002 6,417,015'Semiconductor processing methods and semiconductor defect detection methods'2002 6,417,928'Reflectance method for evaluating the surface characteristics of opaque materials'2002 6,392,284'Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer'2002 6,387,716'Semiconductor processing methods and semiconductor defect detection methods'2002 6,368,919'Method and composite for decreasing charge leakage'2002 6,333,243'Method for growing field oxide to minimize birds\' beak length'2001 6,327,040'Reflectance method for evaluating the surface characteristics of opaque materials'2001 6,275,292'Reflectance method for evaluating the surface characteristics of opaque materials'2001 6,262,485'Using implants to lower anneal temperatures'2001 6,251,693'Semiconductor processing methods and semiconductor defect detection methods'2001 6,235,613'Method of producing HSG using an amorphous silicon disordered layer as a substrate'2001 6,225,157'Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer'2001 6,195,163'Reflectance method for evaluating the surface characteristics of opaque materials'2001 6,187,628'Semiconductor processing method of forming hemispherical grain polysilicon and a substrate having a hemispherical grain polysilicon layer'2001 6,165,853'Trench isolation method'2000 6,159,852'Method of depositing polysilicon, method of fabricating a field effect transistor, method of forming a contact to a substrate, method of forming a capacitor'2000 6,150,706'Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer'2000 6,027,984'Method for growing oxide'2000 6,027,990'Using implants to lower anneal temperatures'2000 5,976,990'Method for optimization of thin film deposition'1999 5,969,983'Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer'1999 5,899,702'Methods for measuring surface area'1999 5,885,896'Using implants to lower anneal temperatures'1999 5,831,282'Method of producing an HSG structure using an amorphous silicon disorder layer as a substrate'1998 5,825,498'Ultraviolet light reflectance method for evaluating the surface characteristics of opaque materials'1998 5,712,186'Method for growing field oxide to minimize birds\' beak length'1998 5,658,381'Method to form hemispherical grain (HSG) silicon by implant seeding followed by vacuum anneal'1997 5,578,505'Methods for measuring the surface area of a semiconductor wafer'1996

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1996–2011Patents assigned to MICRON TECHNOLOGY INC (50)· patent assignee history

1996–2011Based in Meridian, ID, US· patent location history

1998Based in Meridan, ID, US· patent location history

2007–2021Patents assigned to TRUDELL MEDICAL INT (14)· patent assignee history

2007–2021Based in London, CA· patent location history

2011–2018Patents assigned to NUTTALL MICHAEL (8)· patent assignee history

2013–2018Patents assigned to FINLAY BRYAN (6)· patent assignee history

2013–2019Patents assigned to UNIV WESTERN ONTARIO (6)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
MICRON TECHNOLOGY INC	50	1996–2011
TRUDELL MEDICAL INT	14	2007–2021
NUTTALL MICHAELself	8	2011–2018
FINLAY BRYAN	6	2013–2018
UNIV WESTERN ONTARIO	6	2013–2019

Locations

Location	Patents	Span
Meridian, ID, US	49	1996–2011
London, CA	16	2007–2021
Meridan, ID, US	1	1998