Inventor
El Mehdi Bazizi
Inventor
Dresden, DE
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices39%
H01LSemiconductor devices36%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
G06FElectric digital data processing3%
H10BElectronic memory devices3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
10,930,777Laterally double diffused metal oxide semiconductor (LDMOS) device on fully depleted silicon on insulator (FDSOI) enabling high input voltage202110,733,354System and method employing three-dimensional (3D) emulation of in-kerf optical macros202010,680,065Field-effect transistors with a grown silicon-germanium channel202010,644,152Buried-channel low noise transistors and methods of making such devices202010,497,803Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications201910,283,642Thin body field effect transistor including a counter-doped channel area and a method of forming the same201910,283,584Capacitive structure in a semiconductor device having reduced capacitance variability201910,121,846Resistor structure with high resistance based on very thin semiconductor layer20189,905,707'MOS capacitive structure of reduced capacitance variability'20189,881,841'Methods for fabricating integrated circuits with improved implantation processes'20189,711,513'Semiconductor structure including a nonvolatile memory cell and method for the formation thereof'20179,312,189'Methods for fabricating integrated circuits with improved implantation processes'20169,263,270'Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structure'20168,994,107'Semiconductor devices and methods of forming the semiconductor devices including a retrograde well'20158,853,752'Performance enhancement in transistors by providing a graded embedded strain-inducing semiconductor region with adapted angles with respect to the substrate surface'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2021Patents assigned to GLOBALFOUNDRIES INC (15)· patent assignee history
2014–2020Based in Dresden, DE· patent location history
2015Patents assigned to BAZIZI EL MEHDI (1)· patent assignee history
2015Patents assigned to BENISTANT FRANCIS (1)· patent assignee history
2019–2021Based in Saratoga Springs, NY, US· patent location history
2020Based in San Jose, CA, US· patent location history
2021Patents assigned to GLOBALFOUNDRIES US INC (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GLOBALFOUNDRIES INC | 15 | 2014–2021 |
| BAZIZI EL MEHDIself | 1 | 2015 |
| BENISTANT FRANCIS | 1 | 2015 |
| GLOBALFOUNDRIES US INC | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Dresden, DE | 11 | 2014–2020 |
| Saratoga Springs, New York, US | 3 | 2019–2021 |
| San Jose, California, US | 1 | 2020 |