Inventor
Yue Qiang PU
Inventor
CN
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices24%
H10BElectronic memory devices24%
H10DInorganic electric semiconductor devices19%
G11CStatic stores14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
PatentTitleYear
11,380,701Memory device and forming method thereof202211,329,061Method for improving channel hole uniformity of a three-dimensional memory device202211,271,004Memory device and forming method thereof202211,211,393Memory device and forming method thereof202111,205,662Methods for reducing defects in semiconductor plug in three-dimensional memory device2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2022Patents assigned to YANGTZE MEMORY TECH CO LTD (5)· patent assignee history
2021–2022Based in CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YANGTZE MEMORY TECH CO LTD | 5 | 2021–2022 |
Locations
| Location | Patents | Span |
|---|---|---|
| CN | 5 | 2021–2022 |