Inventor
Jean Massies
Inventor
Valbonne, FR
Overview
Patents· 12 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10HInorganic light-emitting semiconductor devices having potential barriers15%
C30BSingle-crystal growth12%
H10DInorganic electric semiconductor devices12%
B82YSpecific uses or applications of nanostructures9%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
Y10TTechnical subjects covered by former us classification9%
H01LSemiconductor devices6%
C23CCoating metallic material3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
PatentTitleYear
10,522,346Production of a semiconductor support based on group III nitrides201910,361,077Method for producing a passivated semiconductor structure based on group III nitrides, and one such structure20198,470,618'Method of manufacturing a light-emitting diode having electrically active and passive portions'20137,785,991'Process for integrating a III-N type component on a (001) nominal silicium substrate'20107,776,154'Preparation method of a coating of gallium nitride'20107,767,307'Preparation method of a coating of gallium nitride'20107,273,664'Preparation method of a coating of gallium nitride'20076,730,943'Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination device'20046,445,009'Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings'20025,506,418'Electromagnetic wave detector with quantum well structure'19964,211,587'Process for producing a metal to compound semiconductor contact having a potential barrier of predetermined height'19804,160,166'System for regulating molecular flux and its application to co-evaporation techniques'1979Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1979–1996Patents assigned to THOMSON CSF (3)· patent assignee history
1979–1980Based in Paris, FR· patent location history
1996–2019Based in Valbonne, FR· patent location history
2002–2019Patents assigned to CENTRE NAT RECH SCIENT (7)· patent assignee history
2010Patents assigned to PICOGIGA INTERNAT SAS (1)· patent assignee history
2013Patents assigned to DAMILANO BENJAMIN (1)· patent assignee history
2013Patents assigned to MASSIES JEAN (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CENTRE NAT RECH SCIENT | 7 | 2002–2019 |
| THOMSON CSF | 3 | 1979–1996 |
| DAMILANO BENJAMIN | 1 | 2013 |
| MASSIES JEANself | 1 | 2013 |
| PICOGIGA INTERNAT SAS | 1 | 2010 |
Locations
| Location | Patents | Span |
|---|---|---|
| Valbonne, FR | 10 | 1996–2019 |
| Paris, FR | 2 | 1979–1980 |