Inventor
Takamasa Sakai
Inventor
Kyoto, JP
Overview
Patents· 28 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10DInorganic electric semiconductor devices11%
C23CCoating metallic material9%
G01RMeasuring electric variables9%
G11BInformation storage based on relative movement between record carrier and transducer6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
B08BCleaning in general4%
C30BSingle-crystal growth4%
G01BMeasuring length, thickness or similar linear dimensions4%
H03FAmplifiers4%
PatentTitleYear
10,550,225Process for producing low-concentration gel using gel-precursor clusters, and gel obtained by said production process20207,869,062'Apparatus for supporting substrate, apparatus for measuring surface potential, apparatus for measuring film thickness, and apparatus for inspecting substrate'20117,539,097'Optical disk device'20097,190,643'Land pre-pit address demodulating device'20077,073,521'Substrate processing apparatus comprising ring-shaped motor'20066,598,805'Substrate cleaning apparatus'20035,857,474'Method of and apparatus for washing a substrate'19995,554,939'Non-destructive measuring sensor for semiconductor wafer and method of manufacturing the same'19965,444,389'Method and apparatus for measuring lifetime of minority carriers in semiconductor'19955,239,183'Optical gap measuring device using frustrated internal reflection'19935,233,291'Method of and apparatus for measuring electric characteristics of semiconductor wafer'19935,225,690'Gap measuring device and method using frustrated internal reflection'19934,883,424'Apparatus for heat treating substrates'19894,849,608'Apparatus for heat-treating wafers'19894,803,948'Heat processing apparatus for semiconductor manufacturing'19894,798,926'Method of heating semiconductor and susceptor used therefor'19894,746,857'Probing apparatus for measuring electrical characteristics of semiconductor device formed on wafer'19884,693,208'Feeder of oxygen gas containing steam'19874,630,082'Semiconductor device with multi-electrode construction equivalent to variable capacitance diode'19864,529,994'Variable capacitor with single depletion layer'19854,529,995'Variable capacitance device'19854,473,767'Surface acoustic wave convolver with depletion layer control'19844,466,876'Thin layer depositing apparatus'19844,456,917'Variable capacitor'19844,449,141'Variable capacitor'19844,412,906'Sputtering apparatus'19834,365,216'Surface-acoustic-wave device'19824,357,553'Surface-acoustic-wave device'1982Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1982–1986Patents assigned to CLARION CO LTD (10)· patent assignee history
1982Based in Toda, JP· patent location history
1983–2020Based in Tokyo, JP· patent location history
1987–2011Patents assigned to DAINIPPON SCREEN MFG (15)· patent assignee history
1987–1989Based in Kusatsu, JP· patent location history
1989–2011Based in Kyoto, JP· patent location history
2007Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (1)· patent assignee history
2009Patents assigned to PANASONIC CORP (1)· patent assignee history
2009Based in Osaka, JP· patent location history
2020Patents assigned to UNIV TOKYO (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| DAINIPPON SCREEN MFG | 15 | 1987–2011 |
| CLARION CO LTD | 10 | 1982–1986 |
| MATSUSHITA ELECTRIC INDUSTRIAL CO LTD | 1 | 2007 |
| PANASONIC CORP | 1 | 2009 |
| UNIV TOKYO | 1 | 2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kyoto, JP | 10 | 1989–2011 |
| Tokyo, JP | 8 | 1983–2020 |
| Kusatsu, JP | 4 | 1987–1989 |
| Toda, JP | 2 | 1982 |
| Osaka, JP | 1 | 2009 |