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Inventor

Mohammad Hasanuzzaman

Inventor
Beacon, NY, US

Overview

4→
Patents
2015–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices36%
H10DInorganic electric semiconductor devices36%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
PatentTitleYear
9,748,235'Gate stack for integrated circuit structure and method of forming same'20179,685,334'Methods of forming semiconductor fin with carbon dopant for diffusion control'20179,431,485'Formation of finFET junction'20169,196,712'FinFET extension regions'2015

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2015–2017Patents assigned to GLOBALFOUNDRIES INC (4)· patent assignee history
2015Patents assigned to IBM (1)· patent assignee history
2015–2017Based in Beacon, NY, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
GLOBALFOUNDRIES INC42015–2017
IBM12015
Locations
LocationPatentsSpan
Beacon, New York, US42015–2017