Inventor
Dan Gealy
Inventor
Kuna, ID, US
Overview
Patents· 44 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
C23CCoating metallic material16%
H10BElectronic memory devices16%
H01GCapacitors5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
G11CStatic stores3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
H01LSemiconductor devices2%
C30BSingle-crystal growth1%
PatentTitleYear
9,484,196'Semiconductor structures including liners comprising alucone and related methods'20169,023,436'Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces'20158,951,903'Graded dielectric structures'20158,900,992'Methods of forming a ruthenium material, methods of forming a capacitor, and related electronic systems'20148,513,807'Semiconductor devices including a ruthenium film'20138,378,430'Transistors having argon gate implants and methods of forming the same'20138,133,554'Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces'20128,124,528'Method for forming a ruthenium film'20128,110,469'Graded dielectric layers'20128,012,532'Methods of making crystalline tantalum pentoxide'20117,968,969'Electrical components for microelectronic devices'20117,584,942'Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers'20097,560,392'Electrical components for microelectronic devices and methods of forming the same'20097,390,712'Methods of enhancing capacitors in integrated circuits'20087,311,947'Laser assisted material deposition'20077,241,661'Method of forming a coupling dielectric Ta2O5 in a memory device'20077,232,721'Structures and methods for enhancing capacitors in integrated circuits'20077,206,215'Antifuse having tantalum oxynitride film and method for making same'20077,176,079'Method of fabricating a semiconductor device with a wet oxidation with steam process'20077,118,783'Methods and apparatus for vapor processing of micro-device workpieces'20067,064,052'Method of processing a transistor gate dielectric film with stem'20067,038,263'Integrated circuits with rhodium-rich structures'20067,038,265'Capacitor having tantalum oxynitride film and method for making same'20067,022,623'Method of fabricating a semiconductor device with a dielectric film using a wet oxidation with steam process'20067,009,240'Structures and methods for enhancing capacitors in integrated circuits'20066,962,824'Method for controlling deposition of dielectric films'20056,949,477'Method of fabricating a capacitive element for a semiconductor device'20056,940,112'Integrated capacitors fabricated with conductive metal oxides'20056,869,877'Integrated capacitors fabricated with conductive metal oxides'20056,864,527'Capacitor having tantalum oxynitride film and method for making same'20056,838,293'Method for controlling deposition of dielectric films'20056,797,337'Method for delivering precursors'20046,781,175'Rhodium-rich integrated circuit capacitor electrode'20046,740,554'Methods to form rhodium-rich oxygen barriers'20046,677,640'Memory cell with tight coupling'20046,566,147'Method for controlling deposition of dielectric films'20036,525,365'Dielectric films and capacitor structures including same'20036,518,121'Boride electrodes and barriers for cell dielectrics'20036,518,610'Rhodium-rich oxygen barriers'20036,492,241'Integrated capacitors fabricated with conductive metal oxides'20026,458,645'Capacitor having tantalum oxynitride film and method for making same'20026,444,478'Dielectric films and methods of forming same'20026,316,800'Boride electrodes and barriers for cell dielectrics'20016,111,285'Boride electrodes and barriers for cell dielectrics'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2016Patents assigned to MICRON TECHNOLOGY INC (44)· patent assignee history
2000–2016Based in Kuna, ID, US· patent location history
2012–2015Patents assigned to GEALY DAN (7)· patent assignee history
2012–2015Patents assigned to BHAT VISHWANATH (4)· patent assignee history
2012–2015Patents assigned to SRIVIDYA CANCHEEPURAM V (3)· patent assignee history
2012–2013Patents assigned to ANTONOV VASSIL (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MICRON TECHNOLOGY INC | 44 | 2000–2016 |
| GEALY DANself | 7 | 2012–2015 |
| BHAT VISHWANATH | 4 | 2012–2015 |
| SRIVIDYA CANCHEEPURAM V | 3 | 2012–2015 |
| ANTONOV VASSIL | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kuna, ID, US | 44 | 2000–2016 |