Inventor
Martin Trentzsch
Inventor
Dresden, DE
Overview
Patents· 26 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices54%
H01LSemiconductor devices20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H10BElectronic memory devices7%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
10,163,933Ferro-FET device with buried buffer/ferroelectric layer stack201810,084,057NVM device in SOI technology and method of fabricating an according device20189,508,588'Methods for fabricating integrated circuits with isolation regions having uniform step heights'20169,236,482'Semiconductor device with field-inducing structure'20169,064,900'FinFET method comprising high-K dielectric'20158,993,459'Method of forming a material layer in a semiconductor structure'20158,872,285'Metal gate structure for semiconductor devices'20148,823,138'Semiconductor resistor including a dielectric layer including a species creating fixed charges and method for the formation thereof'20148,735,240'CET and gate current leakage reduction in high-k metal gate electrode structures by heat treatment after diffusion layer removal'20148,735,253'Adjusting of a non-silicon fraction in a semiconductor alloy during transistor fabrication by an intermediate oxidation process'20148,658,490'Passivating point defects in high-K gate dielectric layers during gate stack formation'20148,609,482'Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation process'20138,525,289'Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization'20138,486,786'Enhancing uniformity of a channel semiconductor alloy by forming STI structures after the growth process'20138,445,344'Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning'20138,378,432'Maintaining integrity of a high-K gate stack by an offset spacer used to determine an offset of a strain-inducing semiconductor alloy'20138,349,695'Work function adjustment in high-k gate stacks including gate dielectrics of different thickness'20138,293,610'Semiconductor device comprising a metal gate stack of reduced height and method of forming the same'20128,247,282'Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation process'20128,198,192'Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization'20128,158,065'In situ monitoring of metal contamination during microstructure processing'20128,119,461'Reducing the creation of charge traps at gate dielectrics in MOS transistors by performing a hydrogen treatment'20128,101,512'Method of enhancing lithography capabilities during gate formation in semiconductors having a pronounced surface topography'20128,021,942'Method of forming CMOS device having gate insulation layers of different type and thickness'20117,994,037'Gate dielectrics of different thickness in PMOS and NMOS transistors'20117,745,334'Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2018Based in Dresden, DE· patent location history
2011–2018Patents assigned to GLOBALFOUNDRIES INC (23)· patent assignee history
2012–2015Patents assigned to TRENTZSCH MARTIN (16)· patent assignee history
2012–2014Patents assigned to CARTER RICHARD (6)· patent assignee history
2012–2013Patents assigned to BEYER SVEN (5)· patent assignee history
2012–2014Patents assigned to KRONHOLZ STEPHAN (5)· patent assignee history
2014–2018Based in Radebeul, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GLOBALFOUNDRIES INC | 23 | 2011–2018 |
| TRENTZSCH MARTINself | 16 | 2012–2015 |
| CARTER RICHARD | 6 | 2012–2014 |
| BEYER SVEN | 5 | 2012–2013 |
| KRONHOLZ STEPHAN | 5 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Dresden, DE | 20 | 2010–2018 |
| Radebeul, DE | 6 | 2014–2018 |