Inventor
Noriyuki Miura
Inventor
Kanagawa, JP
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation21%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
H10DInorganic electric semiconductor devices14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
B62DMotor vehicles7%
G01RMeasuring electric variables5%
Y10TTechnical subjects covered by former us classification5%
B60RVehicles, vehicle fittings, or vehicle parts, not otherwise provided for2%
G06FElectric digital data processing2%
G06QInformation and communication technology [ict] specially adapted for administrative, commercial, financial, managerial or supervisory purposes2%
PatentTitleYear
8,981,474'Semiconductor device'20158,399,950'Photodiode'20138,319,304'Light detecting apparatus'20128,115,267'Semiconductor device and fabrication method of the same'20128,079,638'Front structure of vehicle'20118,044,484'Ultraviolet detecting device and manufacturing method thereof, and ultraviolet quantity measuring apparatus'20118,042,834'Front structure of vehicle'20118,039,917'Photodiode and photo IC using same'20118,020,925'Front structure of cab-over type vehicle'20117,932,115'Method of producing photodiode and the photodiode'20117,843,031'Ultraviolet detecting device and manufacturing method thereof, and ultraviolet quantity measuring apparatus'20107,813,259'Electronic circuit'20107,768,790'Electronic circuit'20107,709,920'Photodiode arrangement'20107,687,873'Photodiode and photo integrated circuit having the same'20107,546,106'Electronic circuit'20096,974,982'Method of manufacturing semiconductor device and semiconductor device'20056,885,066'SOI type MOSFET'20056,825,535'Field effect transistor formed on SOI substrate'20046,825,074'Method of manufacturing a silicon-on-insulator (SOI) semiconductor device'20046,566,712'SOI structure semiconductor device and a fabrication method thereof'20036,277,684'Method of fabricating a SOI structure semiconductor device'20015,993,050'Method of and apparatus for extracting model parameters'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2010Patents assigned to OKI ELECTRIC IND CO LTD (8)· patent assignee history
1999–2004Based in Tokyo, JP· patent location history
2004–2013Based in Kanagawa, JP· patent location history
2009–2010Based in Yokohama, JP· patent location history
2010–2013Patents assigned to OKI SEMICONDUCTOR CO LTD (6)· patent assignee history
2011–2015Patents assigned to MIURA NORIYUKI (5)· patent assignee history
2011Patents assigned to ISUZU MOTORS LTD (3)· patent assignee history
2011Based in Fujisawa, JP· patent location history
2012–2015Patents assigned to LAPIS SEMICONDUCTOR CO LTD (3)· patent assignee history
2012–2015Based in Miyagi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| OKI ELECTRIC IND CO LTD | 8 | 1999–2010 |
| OKI SEMICONDUCTOR CO LTD | 6 | 2010–2013 |
| MIURA NORIYUKIself | 5 | 2011–2015 |
| ISUZU MOTORS LTD | 3 | 2011 |
| LAPIS SEMICONDUCTOR CO LTD | 3 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 10 | 2004–2013 |
| Tokyo, JP | 4 | 1999–2004 |
| Miyagi, JP | 3 | 2012–2015 |
| Fujisawa, JP | 3 | 2011 |
| Yokohama, JP | 3 | 2009–2010 |