Inventor
Hideki Haruguchi
Inventor
Tokyo, JP
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices67%
H01LSemiconductor devices22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
PatentTitleYear
10,355,082Semiconductor device including active and dummy cell regions20199,972,618Semiconductor device20188,390,097'Insulated gate bipolar transistor having contact region with variable width'20137,777,249'Semiconductor device with enhanced switching speed and method for manufacturing the same'20106,696,702'Silicon carbide semiconductor switching device'20046,683,348'Insulated gate bipolar semiconductor device transistor with a ladder shaped emitter'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2019Patents assigned to MITSUBISHI ELECTRIC CORP (6)· patent assignee history
2004–2019Based in Tokyo, JP· patent location history
2013Patents assigned to HAMAGUCHI TAKUYA (1)· patent assignee history
2013Patents assigned to HARUGUCHI HIDEKI (1)· patent assignee history
2013Patents assigned to TSUNODA TETSUJIRO (1)· patent assignee history
2019Patents assigned to MITSUBISHI ELECTRONIC CORP (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI ELECTRIC CORP | 6 | 2004–2019 |
| HAMAGUCHI TAKUYA | 1 | 2013 |
| HARUGUCHI HIDEKIself | 1 | 2013 |
| MITSUBISHI ELECTRONIC CORP | 1 | 2019 |
| TSUNODA TETSUJIRO | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 6 | 2004–2019 |