Inventor
Vincent M. Donnelly
Inventor
Berkeley Heights, NJ, US
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H01JElectric discharge tubes or discharge lamps14%
C23CCoating metallic material9%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
B29DProducing particular articles from plastics or from substances in a plastic state7%
B82YSpecific uses or applications of nanostructures7%
H05HPlasma technique7%
C23FNon-mechanical removal of metallic material from surface5%
G01KMeasuring temperature5%
G01NInvestigating or analysing materials by determining their chemical or physical properties5%
PatentTitleYear
10,515,782Atomic layer etching with pulsed plasmas201910,207,469Systems and methods for rapidly fabricating nanopatterns in a parallel fashion over large areas20198,968,588'Low electron temperature microwave surface-wave plasma (SWP) processing method and apparatus'20158,030,620'System and method for nano-pantography'20117,883,839'Method and apparatus for nano-pantography'20117,638,759'Hyperthermal neutral beam source and method of operating'20097,358,484'Hyperthermal neutral beam source and method of operating'20086,511,872'Device having a high dielectric constant material and a method of manufacture thereof'20036,143,658'Multilevel wiring structure and method of fabricating a multilevel wiring structure'20005,467,732'Device processing involving an optical interferometric thermometry'19955,229,303'Device processing involving an optical interferometric thermometry using the change in refractive index to measure semiconductor wafer temperature'19934,645,687'Deposition of III-V semiconductor materials'19874,498,953'Etching techniques'19854,397,711'Crystallographic etching of III-V semiconductor materials'19834,394,237'Spectroscopic monitoring of gas-solid processes'19834,377,436'Plasma-assisted etch process with endpoint detection'19834,359,485'Radiation induced deposition of metal on semiconductor surfaces'1982Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1982–1983Patents assigned to BELL TELEPHONE LABOR INC (4)· patent assignee history
1982–2003Based in Berkeley Heights, NJ, US· patent location history
1985–1993Patents assigned to AT & T BELL LAB (2)· patent assignee history
2008–2015Patents assigned to TOKYO ELECTRON LTD (3)· patent assignee history
2008–2019Based in Houston, TX, US· patent location history
2011Patents assigned to UNIV HOUSTON (2)· patent assignee history
2015–2019Patents assigned to UNIV HOUSTON SYSTEM (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| BELL TELEPHONE LABOR INC | 4 | 1982–1983 |
| TOKYO ELECTRON LTD | 3 | 2008–2015 |
| UNIV HOUSTON SYSTEM | 3 | 2015–2019 |
| AT & T BELL LAB | 2 | 1985–1993 |
| UNIV HOUSTON | 2 | 2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Berkeley Heights, New Jersey, US | 10 | 1982–2003 |
| Houston, Texas, US | 7 | 2008–2019 |