Inventor
Rikimaru Sakamoto
Inventor
Toyama, JP
Overview
Patents· 72 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H01LSemiconductor devices15%
C09DCoating compositions, e.g. paints, varnishes or lacquers14%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds13%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds5%
C08LCompositions of macromolecular compounds3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients2%
B05DProcesses for applying fluent materials to surfaces, in general1%
PatentTitleYear
11,022,884Silicon-containing resist underlayer film-forming composition having halogenated sulfonylalkyl group202110,871,712Stepped substrate-coating composition containing polyether resin having photocrosslinkable group202010,865,262Upper-layer film forming composition and method for producing a phase-separated pattern202010,838,303Resist underlayer film forming composition for lithography containing hydrolyzable silane having carbonate skeleton202010,809,619Resist underlayer film-forming composition containing substituted crosslinkable compound202010,804,111Method for roughening surface using wet treatment202010,795,261Additive for resist underlayer film-forming composition and resist underlayer film-forming composition containing the same202010,684,546Composition for forming resist underlayer film202010,613,435Coating solution for resist pattern coating and method for forming pattern202010,613,440Silicon-containing EUV resist underlayer film-forming composition containing onium sulfonate202010,585,353Resist underlayer film forming composition202010,558,119Composition for coating resist pattern202010,508,181Bottom layer film-formation composition of self-organizing film containing polycyclic organic vinyl compound201910,437,150Composition for forming resist underlayer film with reduced outgassing201910,394,124Resist underlayer film-forming composition containing polymer having arylene group201910,372,040Resist underlayer film forming composition for lithography containing hydrolyzable silane having halogen-containing carboxylic acid amide group201910,295,907Resist underlayer film-forming composition for lithography containing polymer having acrylamide structure and acrylic acid ester structure201910,289,002Electron beam resist underlayer film-forming composition containing lactone-structure-containing polymer201910,280,328Bottom layer film-forming composition of self-organizing film containing styrene structure201910,242,871Resist underlayer film-forming composition including a compound having an amino group protected with a tert-butoxycarbonyl group201910,191,374Resist underlayer film-forming composition201910,139,729Coating composition for pattern reversal on soc pattern201810,133,178Coating liquid for resist pattern coating201810,113,083Resist underlayer film-forming composition containing polymer which contains nitrogen-containing ring compound201810,082,735Silicon-containing resist underlayer film-forming composition having organic group having aliphatic polycyclic structure201810,067,423Additive and resist underlayer film-forming composition containing the same201810,042,247Mask blank, method for manufacturing mask blank and transfer mask201810,042,258Composition for forming a resist upper-layer film and method for producing a semiconductor device using the composition201810,025,191Polymer-containing coating liquid applied to resist pattern201810,017,664Novolac resin-containing resist underlayer film-forming composition using bisphenol aldehyde201810,000,664Underlayer film-forming composition for self-assembled films20189,977,331Resist overlayer film forming composition and method for producing semiconductor device including the same20189,927,705'Additive for resist underlayer film-forming composition and resist underlayer film-forming composition containing the same'20189,910,354'Resist underlayer film-forming composition and method for forming resist pattern using the same'20189,761,741'Film-forming material'20179,753,369'Polymer-containing developer'20179,746,764'Mask blank and transfer mask'20179,746,768'Resist overlayer film forming composition for lithography and method for producing semiconductor device using the same'20179,632,414'Coating liquid to be applied to resist pattern and method for forming reverse pattern'20179,627,217'Silicon-containing EUV resist underlayer film-forming composition including additive'20179,494,864'Resist overlayer film forming composition for lithography and method for manufacturing semiconductor device using the same'20169,469,777'Resist underlayer film forming composition that contains novolac resin having polynuclear phenol'20169,448,480'Resist underlayer film formation composition and method for forming resist pattern using the same'20169,395,628'Resist underlayer film-forming composition containing aryl sulfonate salt having hydroxyl group'20169,394,231'Composition for forming antistatic film and oligomer compound'20169,384,977'Method of manufacturing semiconductor device using organic underlayer film forming composition for solvent development lithography process'20169,337,052'Silicon-containing EUV resist underlayer film forming composition'20169,261,790'Resist underlayer film-forming composition containing copolymer resin having heterocyclic ring'20169,263,286'Diarylamine novolac resin'20169,250,525'Resist underlayer film-forming composition'20169,244,353'Resist underlayer film forming composition'20169,240,327'Resist underlayer film-forming composition for EUV lithography containing condensation polymer'20169,212,255'Resist underlayer film-forming composition'20159,195,137'Composition for forming highly adhesive resist underlayer film'20159,165,782'Additive for resist underlayer film-forming composition and resist underlayer film-forming composition containing the same'20159,046,768'Resist overlayer film forming composition for lithography'20159,005,873'Composition for forming resist underlayer film for EUV lithography'20158,993,215'Resist underlayer film forming composition containing phenylindole-containing novolac resin'20158,962,234'Resist underlayer film forming composition and method for forming resist pattern using the same'20158,722,840'Resist underlayer film forming composition, and method for forming resist pattern using the same'20148,603,731'Resist underlayer film forming composition for electron beam lithography'20138,445,175'Composition containing hydroxylated condensation resin for forming resist underlayer film'20138,435,721'Resist underlayer film forming composition and forming method of resist pattern using the same'20138,383,320'Resist underlayer film forming composition and method of forming resist pattern using the same'20137,846,638'Composition for forming anti-reflective coating for use in lithography'20107,833,681'Mask blank and mask'20107,790,356'Condensation type polymer-containing anti-reflective coating for semiconductor'20107,736,822'Resist underlayer coating forming composition for mask blank, mask blank and mask'20107,632,626'Anti-reflective coating forming composition for lithography containing polymer having ethylenedicarbonyl structure'20097,501,229'Anti-reflective coating containing sulfur atom'20097,425,399'Composition for forming anti-reflective coating for use in lithography'20087,309,560'Composition for forming anti-reflective coating'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2021Patents assigned to NISSAN CHEMICAL IND LTD (66)· patent assignee history
2007–2010Based in Nishikamo-gun, JP· patent location history
2009–2021Based in Toyama, JP· patent location history
2010–2018Patents assigned to HOYA CORP (4)· patent assignee history
2013–2019Patents assigned to SAKAMOTO RIKIMARU (10)· patent assignee history
2013–2019Patents assigned to ENDO TAKAFUMI (6)· patent assignee history
2014–2019Patents assigned to HO BANGCHING (4)· patent assignee history
2017–2019Based in Funabashi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NISSAN CHEMICAL IND LTD | 66 | 2007–2021 |
| SAKAMOTO RIKIMARUself | 10 | 2013–2019 |
| ENDO TAKAFUMI | 6 | 2013–2019 |
| HO BANGCHING | 4 | 2014–2019 |
| HOYA CORP | 4 | 2010–2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| Toyama, JP | 67 | 2009–2021 |
| Nishikamo-gun, JP | 3 | 2007–2010 |
| Funabashi, JP | 2 | 2017–2019 |